Product Information

MIC94051YM4-TR

MIC94051YM4-TR electronic component of Microchip

Datasheet
MOSFET 1.8V-rated reverse-blocking PFET

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7695 ea
Line Total: USD 0.7695

2057 - Global Stock
Ships to you between
Wed. 10 Apr to Fri. 12 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2018 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1

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MIC94051YM4-TR
Microchip

1 : USD 0.6555
25 : USD 0.5681
100 : USD 0.5244

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Channel Mode
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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MIC94050/94051 Micrel MIC94050/94051 4-Terminal SymFET P-Channel MOSFET General Description The MIC94050 and MIC94051 are 4-terminal silicon gate SymFET P-channel MOSFETs that provide low on-resistance in a very small package. Features Designed for high-side switch applications where space is 0.125 typical on-resistance critical, the MIC94050/1 exhibits an on-resistance of typically at 4.5V gate-to-source voltage 0.125 at 4.5V gate-to-source voltage. The MIC94050/1 also Operates with 1.8V gate-to-source voltage operates with only 1.8V gate-to-source voltage. Separate substrate connection allows reverse-blocking The MIC94050 is the basic 4-lead P-channel MOSFET. The Applications MIC94051 is a variation that includes an internal gate pull- Distributed power management up resistor that can reduce the system parts count in many PCMCIA card power management applications. USB ports The 4-terminal SOT-143 package permits a substrate con- Battery-powered computers, peripherals nection separate from the source connection. This 4-terminal Handheld bar-code scanners conguration improves the (improved heat dissipation) JA Portable communications equipment and makes reverse-blocking switch applications practical. Reverse blocking battery management The small size, low threshold, and low R make the DS(on) Ordering Information MIC94050/1 the ideal choice for PCMCIA, USB, back-up Part Number Temp. Range* Package Pb-FREE battery-power, and distributed power management applica- MIC94050BM4 40C to +150C SOT-143 NO tions. MIC94051BM4 40C to +150C SOT-143 NO MIC94050YM4 40C to +150C SOT-143 YES MIC94051YM4 40 to +150C SOT-143 YES * Operating Junction Temperature Pin Conguration Typical PCB Layout PCB heat sikn D r a i n S u b s t r a t e D plane improves heat dissipation P a r t Part Number Identication S S I d e n t i f i c a t i o n P 5 x MIC94050BM4 P50 MIC94051BM4 P51 MIC94050YM4 P50 G a t e S o u r c e MIC94051YM4 P51 SOT-143 Package (M4) G S PCB traces Schematic Symbol Functional Diagrams S S S o u r c e ~350k Ga t e G S S G SS S u b s t r a t e Internal D r a i n gate-to-source D D pull-up resistor Schematic Symbol MIC94050 MIC94051 SymFET is a trademark of Micrel, Inc. Micrel, Inc. 1849 Fortune Drive San Jose, CA 95131 USA tel + 1 (408) 944-0800 fax + 1 (408) 944-0970 MIC94050/94051 Micrel Absolute Maximum Ratings Operating Ratings Drain-to-Source Voltage 6V Thermal Resistance ................................................................................................................................220C/W Gate-to-Source Voltage ................................................. 6V JA .....................................................................130C/W Continuous Drain Current JC T = 25C (V = 4.5V) ............................................ 1.8A A GS T = 100C (V = 4.5V) .......................................... 1.2A A GS Total Power Dissipation T = 25C ............................................................. 568mW A T = 100C ........................................................... 227mW A Operating Junction Temperature .............. 40C to +150C Storage Temperature ................................ 55C to +150C ESD Rating, Note 2 Electrical Characteristics (Note 1) Symbol Parameter Condition (Note 1) Min Typ Max Units V Gate Threshold Voltage V = V , I = 250A 0.5 1.2 V GS DS GS D I Gate-Body Leakage V = 0V, V = 4.5V, Note 2, Note 3 1 A GSS DS GS R Gate-Source Resistance V = 0V, V = 4.5V, Note 2, Note 4 200 350 500 k GS DS GS C Input Capacitance V = 0V, V = 5.5V 600 pF ISS GS DS I Zero Gate Voltage Drain Current V = 5.5V, V = 0V 1 A DSS DS GS V = 5.5V, V = 0V, T = 85C 5 A DS GS J R Drain-Source On-Resistance V = 4.5V, I = 100mA 0.125 0.160 DS(ON) GS D V = 3.6V, I = 100mA 0.135 0.180 GS D V = 2.5V, I = 100mA 0.165 0.200 GS D V = 1.8V, I = 100mA 0.225 0.320 GS D g Forward Transconductance V = 5.5V, I = 200mA, Note 5 3 S FS DS D Note 1. T = 25C unless noted. Substrate connected to source for all conditions. A Note 2. ESD gate precautions required Note 3. MIC94050 only. Note 4. MIC94051 only. Note 5. Pulse Test: Pulse Width 80s, Duty Cycle 0.5%. MIC94050/94051 2 January 2007

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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