Product Information

LND150N3-G-P014

LND150N3-G-P014 electronic component of Microchip

Datasheet
Microchip Technology MOSFET DepletionMode MOSFET

Manufacturer: Microchip
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Price (USD)

1: USD 0.7186 ea
Line Total: USD 0.7186

1940 - Global Stock
Ships to you between
Wed. 10 Apr to Fri. 12 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1825 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1

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LND150N3-G-P014
Microchip

1 : USD 0.6958
25 : USD 0.5888
100 : USD 0.5566

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Product
Width
Cnhts
Hts Code
Mxhts
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LND150 N-Channel Depletion-Mode DMOS FET Features General Description Free from secondary breakdown The LND150 is a high voltage N-channel depletion mode Low power drive requirement (normally-on) transistor utilizing Supertexs lateral DMOS Ease of paralleling technology. The gate is ESD protected. Excellent thermal stability Integral source-drain diode The LND150 is ideal for high voltage applications in the High input impedance and low C areas of normally-on switches, precision constant current ISS ESD gate protection sources, voltage ramp generation and amplication. Applications Solid state relays Normally-on switches Converters Power supply circuits Constant current sources Input protection circuits Ordering Information R I Package Options DS(ON) DSS BV /BV DSX DGX Device (max) (min) (V) TO-236AB (SOT-23) TO-92 TO-243AA (SOT-89) (K) (mA) LND150 LND150K1-G LND150N3-G LND150N8-G 500 1.0 1.0 -G indicates package is RoHS compliant (Green) Pin Congurations DRAIN Absolute Maximum Ratings SOURCE Parameter Value GATE Drain-to-source BV DSX TO-92 (N3) Drain-to-gate BV DGX Gate-to-source 20V SOURCE SOURCE O O Operating and storage temperature -55 C to +150 C O Soldering temperature* 300 C DRAIN DRAIN Absolute Maximum Ratings are those values beyond which damage to the device SOURCE may occur. Functional operation under these conditions is not implied. Continuous GATE GATE operation of the device at the absolute rating level may affect device reliability. All TO-236AB (SOT-23) (K1) TO-243AA (SOT-89) (N8) voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. Product Marking S i L N YY = Year Sealed W = Code for Week Sealed D 1 5 0 W = Code for Week Sealed WW = Week Sealed N D E W L N 1 E W = Green Packaging Y Y W W = Green Packaging = Green Packaging TO-236AB (SOT-23) (K1) TO-92 (N3) TO-243AA (SOT-89) (N8) Packages may or may not include the following marks: Si or 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comLND150 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C A O O ( C/W) ( C/W) (mA) (mA) (mA) (mA) (W) TO-236AB (SOT-23) 13 30 0.36 200 350 13 30 TO-92 30 30 0.74 125 170 30 30 TO-243AA (SOT-89) 30 30 1.6 15 78 30 30 Notes: I (continuous) is limited by max rated T. D j Mounted on FR4 board, 25mm x 25mm x 1.57mm O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 500 - - V V = -10V, I = 1.0mA DSX GS D V Gate-to-source off voltage -1.0 - -3.0 V V = 25V, I = 100nA GS(OFF) GS D O V Change in V with temperature - - 5.0 mV/ C V = 25V, I = 100nA GS(OFF) GS(OFF) GS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 100 nA V = -10V, V = 450V GS DS I Drain-to-source leakage current V = 0.8V Max Rating, D(OFF) DS - - 100 A O V = -10V, T = 125 C GS A I Saturated drain-to-source current 1.0 - 3.0 mA V = 0V, V = 25V DSS GS DS R Static drain-to-source on-state resistance - 850 1000 V = 0V, I = 0.5mA DS(ON) GS D O R Change in R with temperature - - 1.2 %/ C V = 0V, I = 0.5mA DS(ON) DS(ON) GS D G Forward transductance 1.0 2.0 - m V = 0V, I = 1.0mA FS DS D C Input capacitance - 7.5 10 ISS V = -10V, GS C Common source output capacitance - 2.0 3.5 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 0.5 1.0 RSS t Turn-on delay time - 0.09 - d(ON) V = 25V, DD t Rise time - 0.45 - r s I = 1.0mA, D t Turn-off delay time - 0.1 - d(OFF) R = 25 GEN t Fall time - 1.3 - f V Diode forward voltage drop - - 0.9 V V = -10V, I = 1.0mA SD GS SD t Reverse recovery time - 200 - ns V = -10V, I = 1.0mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 0V 90% R L INPUT PULS E 10% GENERATOR -10V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON ) r d(OFF) f V DD D.U.T. 10% 10% OUTPUT INPU T 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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