Product Information

LND150N3-G

LND150N3-G electronic component of Microchip

Datasheet
Transistor: N-MOSFET; unipolar; 500V; 0.03A; 740mW; TO92

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 0.6239 ea
Line Total: USD 31.195

8827 - Global Stock
Ships to you between
Fri. 05 Apr to Thu. 11 Apr
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
8827 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 50
Multiples : 50

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LND150N3-G
Microchip

50 : USD 0.6239
250 : USD 0.598
1000 : USD 0.5669
3000 : USD 0.5324
5000 : USD 0.5243
8000 : USD 0.5165
10000 : USD 0.5087
15000 : USD 0.5011

547 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 1
Multiples : 1

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LND150N3-G
Microchip

1 : USD 0.5561
25 : USD 0.5561
100 : USD 0.5561

805 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 1
Multiples : 1

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LND150N3-G
Microchip

1 : USD 0.7956
10 : USD 0.7423
25 : USD 0.689
50 : USD 0.65
100 : USD 0.6097

13192 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1

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LND150N3-G
Microchip

1 : USD 0.6245
25 : USD 0.5566
100 : USD 0.5083

1180 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 3
Multiples : 1

Stock Image

LND150N3-G
Microchip

3 : USD 1.0361
10 : USD 0.9334
22 : USD 0.7605
25 : USD 0.7592
60 : USD 0.7189

8827 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 150
Multiples : 50

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LND150N3-G
Microchip

150 : USD 0.811

547 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 13
Multiples : 1

Stock Image

LND150N3-G
Microchip

13 : USD 0.5561

1197 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 94
Multiples : 1

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LND150N3-G
Microchip

94 : USD 0.931

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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LND150 N-Channel Depletion-Mode DMOS FET Features General Description Free from secondary breakdown The LND150 is a high voltage N-channel depletion mode Low power drive requirement (normally-on) transistor utilizing Supertexs lateral DMOS Ease of paralleling technology. The gate is ESD protected. Excellent thermal stability Integral source-drain diode The LND150 is ideal for high voltage applications in the High input impedance and low C areas of normally-on switches, precision constant current ISS ESD gate protection sources, voltage ramp generation and amplication. Applications Solid state relays Normally-on switches Converters Power supply circuits Constant current sources Input protection circuits Ordering Information R I Package Options DS(ON) DSS BV /BV DSX DGX Device (max) (min) (V) TO-236AB (SOT-23) TO-92 TO-243AA (SOT-89) (K) (mA) LND150 LND150K1-G LND150N3-G LND150N8-G 500 1.0 1.0 -G indicates package is RoHS compliant (Green) Pin Congurations DRAIN Absolute Maximum Ratings SOURCE Parameter Value GATE Drain-to-source BV DSX TO-92 (N3) Drain-to-gate BV DGX Gate-to-source 20V SOURCE SOURCE O O Operating and storage temperature -55 C to +150 C O Soldering temperature* 300 C DRAIN DRAIN Absolute Maximum Ratings are those values beyond which damage to the device SOURCE may occur. Functional operation under these conditions is not implied. Continuous GATE GATE operation of the device at the absolute rating level may affect device reliability. All TO-236AB (SOT-23) (K1) TO-243AA (SOT-89) (N8) voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. Product Marking S i L N YY = Year Sealed W = Code for Week Sealed D 1 5 0 W = Code for Week Sealed WW = Week Sealed N D E W L N 1 E W = Green Packaging Y Y W W = Green Packaging = Green Packaging TO-236AB (SOT-23) (K1) TO-92 (N3) TO-243AA (SOT-89) (N8) Packages may or may not include the following marks: Si or 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comLND150 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C A O O ( C/W) ( C/W) (mA) (mA) (mA) (mA) (W) TO-236AB (SOT-23) 13 30 0.36 200 350 13 30 TO-92 30 30 0.74 125 170 30 30 TO-243AA (SOT-89) 30 30 1.6 15 78 30 30 Notes: I (continuous) is limited by max rated T. D j Mounted on FR4 board, 25mm x 25mm x 1.57mm O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 500 - - V V = -10V, I = 1.0mA DSX GS D V Gate-to-source off voltage -1.0 - -3.0 V V = 25V, I = 100nA GS(OFF) GS D O V Change in V with temperature - - 5.0 mV/ C V = 25V, I = 100nA GS(OFF) GS(OFF) GS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 100 nA V = -10V, V = 450V GS DS I Drain-to-source leakage current V = 0.8V Max Rating, D(OFF) DS - - 100 A O V = -10V, T = 125 C GS A I Saturated drain-to-source current 1.0 - 3.0 mA V = 0V, V = 25V DSS GS DS R Static drain-to-source on-state resistance - 850 1000 V = 0V, I = 0.5mA DS(ON) GS D O R Change in R with temperature - - 1.2 %/ C V = 0V, I = 0.5mA DS(ON) DS(ON) GS D G Forward transductance 1.0 2.0 - m V = 0V, I = 1.0mA FS DS D C Input capacitance - 7.5 10 ISS V = -10V, GS C Common source output capacitance - 2.0 3.5 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 0.5 1.0 RSS t Turn-on delay time - 0.09 - d(ON) V = 25V, DD t Rise time - 0.45 - r s I = 1.0mA, D t Turn-off delay time - 0.1 - d(OFF) R = 25 GEN t Fall time - 1.3 - f V Diode forward voltage drop - - 0.9 V V = -10V, I = 1.0mA SD GS SD t Reverse recovery time - 200 - ns V = -10V, I = 1.0mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 0V 90% R L INPUT PULS E 10% GENERATOR -10V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON ) r d(OFF) f V DD D.U.T. 10% 10% OUTPUT INPU T 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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