Product Information

AT28BV64B-20SU-T

AT28BV64B-20SU-T electronic component of Microchip

Datasheet
EEPROM 200NS IND TEMP GRN PKG

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.7965 ea
Line Total: USD 6.7965

69 - Global Stock
Ships to you between
Wed. 10 Apr to Fri. 12 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
69 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1
1 : USD 6.7965
25 : USD 6.5435
100 : USD 6.2905

     
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RoHS - XON
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Supply Voltage - Max
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Maximum Operating Temperature
Access Time
Data Retention
Supply Current - Max
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Operating Supply Current
Operating Supply Voltage
Output Enable Access Time
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Features Single 2.7V to 3.6V Supply Hardware and Software Data Protection Low Power Dissipation 15mA Active Current 20A CMOS Standby Current Fast Read Access Time 200ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes 64K (8K x 8) Internal Control Timer Fast Write Cycle Times Battery-Voltage Page Write Cycle Time: 10 ms Maximum 1 to 64 Byte Page Write Operation Parallel DATA Polling for End of Write Detection High-reliability CMOS Technology EEPROM Endurance: 100,000 Cycles Data Retention: 10 Years with Page Write JEDEC Approved Byte-wide Pinout Industrial Temperature Ranges and Software Green (Pb/Halide-free) Packaging Only Data Protection 1. Description The Atmel AT28BV64B is a high-performance electrically erasable programmable AT28BV64B read only-memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 20A. The AT28BV64B is accessed like a static RAM for the read or write cycle without the need for external components. The device contains a 64 byte page register to allow writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to 64 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA polling of I/O7. Once the end of a write cycle has been detected a new access for a read or write can begin. Atmels AT28BV64B has additional features to ensure high quality and manufactur- ability. A software data protection mechanism guards against inadvertent writes. The device also includes an extra 64 bytes of EEPROM for device identification or tracking. Atmel-0299K-PEEPROM-AT28BV64B-Datasheet 0720142.2 32-lead PLCC Top View 2. Pin Configurations Pin Name Function A0 - A12 Addresses A6 5 29 A8 CE Chip Enable A5 6 28 A9 OE Output Enable A4 7 27 A11 WE Write Enable A3 8 26 NC A2 9 25 OE I/O0 - I/O7 Data Inputs/Outputs A1 10 24 A10 NC No Connect A0 11 23 CE NC 12 22 I/O7 DC Dont Connect I/O0 13 21 I/O6 Note: PLCC package pins 1 and 17 are Dont Connect. 2.1 28-lead SOIC Top View 2.3 28-lead TSOP Top View NC 1 28 VCC OE 1 28 A10 A11 2 27 CE A12 2 27 WE A9 3 26 I/O7 A7 3 26 NC A8 4 25 I/O6 A6 4 25 A8 NC 5 24 I/O5 A5 5 24 A9 WE 6 23 I/O4 A4 6 23 A11 VCC 7 22 I/O3 NC 8 21 GND A3 7 22 OE A12 9 20 I/O2 A2 8 21 A10 A7 10 19 I/O1 A1 9 20 CE A6 11 18 I/O0 A0 10 19 I/O7 A5 12 17 A0 I/O0 11 18 I/O6 A4 13 16 A1 A3 14 15 A2 I/O1 12 17 I/O5 I/O2 13 16 I/O4 GND 14 15 I/O3 2 AT28BV64B Atmel-0299K-PEEPROM-AT28BV64B-Datasheet 072014 I/O1 14 4 A7 I/O2 15 3 A12 GND 16 2 NC DC 17 1 DC I/O3 18 32 VCC I/O4 19 31 WE I/O5 20 30 NC

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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