Product Information

AT24C16D-XHM-B

AT24C16D-XHM-B electronic component of Microchip

Datasheet
Memory; EEPROM; I2C; 2048x8bit; 1.7÷3.6V; 1MHz; TSSOP8

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3139 ea
Line Total: USD 0.31

1802 - Global Stock
Ships to you between
Thu. 02 May to Mon. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3298 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 1
Multiples : 1

Stock Image

AT24C16D-XHM-B
Microchip

1 : USD 0.387
25 : USD 0.362

1802 - Global Stock


Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 1
Multiples : 1

Stock Image

AT24C16D-XHM-B
Microchip

1 : USD 0.3139
25 : USD 0.3105
100 : USD 0.3013

183 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 1
Multiples : 1

Stock Image

AT24C16D-XHM-B
Microchip

1 : USD 0.988
10 : USD 0.8021
23 : USD 0.715
25 : USD 0.7046
62 : USD 0.676

183 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 100
Multiples : 1

Stock Image

AT24C16D-XHM-B
Microchip

100 : USD 0.988

1728 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 18
Multiples : 1

Stock Image

AT24C16D-XHM-B
Microchip

18 : USD 0.31

     
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AT24C16D IC-Compatible (Two-Wire) Serial EEPROM 16Kbit (2,048 x 8) Features Low-Voltage Operation: V = 1.7V to 3.6V CC Internally Organized as 2,048 x 8 (16K) Industrial Temperature Range: -40C to +85C 2 I C-Compatible (Two-Wire) Serial Interface: 100 kHz Standard Mode, 1.7V to 3.6V 400 kHz Fast Mode, 1.7V to 3.6V 1 MHz Fast Mode Plus (FM+), 2.5V to 3.6V Schmitt Triggers, Filtered Inputs for Noise Suppression Bidirectional Data Transfer Protocol Write-Protect Pin for Full Array Hardware Data Protection Ultra Low Active Current (1 mA maximum) and Standby Current (0.8 A maximum) 16-Byte Page Write Mode: Partial page writes allowed Random and Sequential Read Modes Self-Timed Write Cycle within 5 ms Maximum ESD Protection > 4,000V High Reliability: Endurance: 1,000,000 write cycles Data retention: 100 years Green Package Options (Lead-free/Halide-free/RoHS compliant) Die Sale Options: Wafer Form Packages 8-Lead PDIP, 8-Lead SOIC, 5-Lead SOT23, 8-Lead TSSOP, 8-Pad UDFN and 8-Ball VFBGA Datasheet DS20005858B-page 1 2017-2021 Microchip Technology Inc. AT24C16D Table of Contents Features......................................................................................................................................................... 1 Packages........................................................................................................................................................1 1. Package Types (not to scale)..................................................................................................................4 2. Pin Descriptions...................................................................................................................................... 5 2.1. Ground......................................................................................................................................... 5 2.2. Serial Data (SDA).........................................................................................................................5 2.3. Serial Clock (SCL)........................................................................................................................5 2.4. Write-Protect (WP)....................................................................................................................... 5 2.5. Device Power Supply (V )......................................................................................................... 6 CC 3. Description.............................................................................................................................................. 7 3.1. System Configuration Using Two-Wire Serial EEPROMs ...........................................................7 3.2. Block Diagram..............................................................................................................................8 4. Electrical Characteristics.........................................................................................................................9 4.1. Absolute Maximum Ratings..........................................................................................................9 4.2. DC and AC Operating Range.......................................................................................................9 4.3. DC Characteristics....................................................................................................................... 9 4.4. AC Characteristics......................................................................................................................10 4.5. Electrical Specifications..............................................................................................................11 5. Device Operation and Communication................................................................................................. 13 5.1. Clock and Data Transition Requirements...................................................................................13 5.2. Start and Stop Conditions.......................................................................................................... 13 5.3. Acknowledge and No-Acknowledge...........................................................................................14 5.4. Standby Mode............................................................................................................................ 14 5.5. Software Reset...........................................................................................................................14 6. Memory Organization............................................................................................................................16 6.1. Device Addressing..................................................................................................................... 16 7. Write Operations................................................................................................................................... 17 7.1. Byte Write...................................................................................................................................17 7.2. Page Write..................................................................................................................................17 7.3. Acknowledge Polling.................................................................................................................. 18 7.4. Write Cycle Timing..................................................................................................................... 18 7.5. Write Protection..........................................................................................................................19 8. Read Operations...................................................................................................................................20 8.1. Current Address Read................................................................................................................20 8.2. Random Read............................................................................................................................ 20 8.3. Sequential Read.........................................................................................................................21 9. Device Default Condition from Microchip.............................................................................................. 22 10. Packaging Information.......................................................................................................................... 23 DS20005858B-page 2 Datasheet 2017-2021 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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