Product Information

APT8056BVRG

APT8056BVRG electronic component of Microchip

Datasheet
Trans MOSFET N-CH 800V 16A 3-Pin(3+Tab) TO-247

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 16.652 ea
Line Total: USD 16.652

156 - Global Stock
Ships to you between
Wed. 10 Apr to Fri. 12 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
25 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 2
Multiples : 1

Stock Image

APT8056BVRG
Microchip

2 : USD 19.8625
10 : USD 18.1875
25 : USD 17.4375
50 : USD 17.175
100 : USD 16.325
250 : USD 16.075
500 : USD 15.8375

156 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1

Stock Image

APT8056BVRG
Microchip

1 : USD 16.652
25 : USD 16.652
100 : USD 15.364
250 : USD 15.1455
500 : USD 14.7775

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Packaging
Technology
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
AR1010-I/SS electronic component of Microchip AR1010-I/SS

Microchip Technology Touch Screen Controllers Touch Sensing Contlr
Stock : 1477

AR1011-I/SS electronic component of Microchip AR1011-I/SS

Microchip Technology Touch Screen Controllers Touch Sensing Cont
Stock : 335

AR1011-I/ML electronic component of Microchip AR1011-I/ML

Microchip Technology Touch Screen Controllers Touch Sensing Cont
Stock : 0

AR1010-I/ML electronic component of Microchip AR1010-I/ML

Touchscreen Controller 4, 5, or 8 Wire Resistive 10 b UART Interface 20-QFN (4x4)
Stock : 150

AR1010-I/SO electronic component of Microchip AR1010-I/SO

Touch screen controller; 4-wire,5-wire,8-wire, UART; 3.3÷5.5VDC
Stock : 2

AR1011-ISO electronic component of Microchip AR1011-ISO

Microchip Technology Touch Screen Controllers Touch Sensing Controller
Stock : 3804

Image Description
IMW120R030M1HXKSA1 electronic component of Infineon IMW120R030M1HXKSA1

CoolSiC Silicon Carbide Trench MOSFET N-Channel 1200V 56A 3-Pin TO-247 Tube
Stock : 3360

IMW65R072M1HXKSA1 electronic component of Infineon IMW65R072M1HXKSA1

MOSFET SILICON CARBIDE MOSFET
Stock : 3360

IRFB13N50APBF electronic component of Infineon IRFB13N50APBF

MOSFET N Channel 500V 14A 4V @ 250uA 450mO @ 8.4A,10V TO-220(TO-220-3) RoHS
Stock : 0

CS7N65FA9D electronic component of Huajing CS7N65FA9D

MOSFET N Channel 650V 7A(Tc) 4V @ 250uA 1.4O @ 3.5A,10V TO-220F(TO-220IS) RoHS
Stock : 353

WSD3042DN56 electronic component of Winsok WSD3042DN56

MOSFET N Channel 30V 40A(Tc) 1.3V @ 250uA 10.8mO @ 10A,10V DFN5x6-8 RoHS
Stock : 12505

WSD20L120DN electronic component of Winsok WSD20L120DN

MOSFET P Channel 20V 120A(Tc) 1V @ 250uA 2.7mO @ 20A,4.5V DFN-8 RoHS
Stock : 0

IRLR2908TRLPBF electronic component of Infineon IRLR2908TRLPBF

MOSFET MOSFT 80V 39A 28mOhm 22nC Log Lvl
Stock : 0

CS10N60FA9R electronic component of Huajing CS10N60FA9R

MOSFET N Channel 600V 10A(Tc) 4V @ 250uA 900mO @ 5A,10V TO-220F(TO-220IS) RoHS
Stock : 0

CS10N65FA9HD electronic component of Huajing CS10N65FA9HD

MOSFET N Channel 650V 10A(Tc) 4V @ 250uA 850mO @ 5A,10V TO-220F(TO-220IS) RoHS
Stock : 0

IRFR7540PBF electronic component of Infineon IRFR7540PBF

MOSFET 60V StrongIRFET Power Mosfet
Stock : 0

APT8056BVR 800V 16A 0.560 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower Leakage Popular TO-247 Package G S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT8056BVR UNIT V Drain-Source Voltage 800 Volts DSS I Continuous Drain Current T = 25C 16 D C Amps 1 I Pulsed Drain Current 64 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C 370 Watts C P D Linear Derating Factor 2.96 W/C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Avalanche Current (Repetitive and Non-Repetitive) 16 Amps AR 1 E 30 Repetitive Avalanche Energy AR mJ 4 E Single Pulse Avalanche Energy 1300 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 800 Volts DSS GS D 2 I On State Drain Current (V > I x R Max, V = 10V) Amps 16 D(on) DS D(on) DS(on) GS 2 R Drain-Source On-State Resistance (V = 10V, 0.5 I ) Ohms 0.56 DS(on) GS D Cont. Zero Gate Voltage Drain Current (V = V , V = 0V) 25 DS DSS GS I A DSS Zero Gate Voltage Drain Current (V = 0.8 V , V = 0V, T = 125C) 250 DS DSS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 1.0mA) Volts 24 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT8056BVR Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance V = 0V 3700 4440 iss GS C Output Capacitance V = 25V oss 370 515 pF DS C f = 1 MHz Reverse Transfer Capacitance rss 180 270 Q 3 Total Gate Charge V = 10V g 185 275 GS Q V = 0.5 V Gate-Source Charge 16 24 nC gs DD DSS I = I 25C Q D D Cont. Gate-Drain Mille) Charge gd 90 135 t Turn-on Delay Time V = 15V 12 24 d(on) GS t V = 0.5 V Rise Time 10 20 r DD DSS ns I = I 25C t Turn-off Delay Time D D Cont. 50 75 d(off) R = 1.6 t G Fall Time 10 20 f SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 16 S Amps 1 I Pulsed Source Current (Body Diode) 64 SM 2 V Diode Forward Voltage (V = 0V, I = -I ) 1.3 Volts SD GS S D Cont. t Reverse Recovery Time (I = -I , dl /dt = 100A/s) 750 ns rr S D Cont. S Q Reverse Recovery Charge (I = -I , dl /dt = 100A/s) 11 C rr S D Cont. S THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.34 JC C/W R Junction to Ambient 40 JA 1 3 Repetitive Rating: Pulse width limited by maximum junction See MIL-STD-750 Method 3471 4 temperature. Starting T = +25C, L = 10.16mH, R = 25, Peak I = 16A j G L 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 0.4 D=0.5 0.1 0.2 0.05 0.1 0.05 Note: 0.02 0.01 t 1 0.01 0.005 t 2 t 1 SINGLE PULSE Duty Factor D = / t 2 Peak T = P x Z + T J DM JC C 0.001 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-5564 Rev B Z , THERMAL IMPEDANCE (C/W) JC P DM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
AT9
ATM
Atmel
Atmel Wireless (VA)
M4S
M6S
M8S
M9S
MCP
Micrel
Micrel Inc
MICREL SEMICONDUCTOR
MICREL SYNERGY SEMI
MICROCHIP (ATMEL)
MICROCHIP (MICREL)
MICROCHIP (MICROSEMI)
MICROCHIP (SUPERTEX)
Microchip / Microsemi
Microchip / Vectron
Microchip Tech
MICROCHIP TECH.
Microchip Technology
Microchip Technology Micrel
Microchip Technology / Atmel
Microchip Technology / Micrel
MICROCHIPDIRECT
MICROSEMI
Microsemi Analog Mixed Signal Group
Microsemi Analog Mixed Signal Group [MIL]
Microsemi Commercial Components Group
MICROSEMI COMMUNICATIONS INC.
Microsemi Consumer Medical Product Group
Microsemi Corporation
Microsemi FTD
Microsemi Power Management Group
Microsemi Power Products Group
Microsemi SoC
MICROSEMI/LAWRENCE
MICROSEMI/LINFINITY
MSC
Roving Networks
ROVING NETWORKS INC
ROVING NETWORKS INC.
ROVING NETWORKS, INC.
Silicon Storage
SILICON STORAGE TECH
SILICON STORAGE TECHNOLOGY
Supertex
Vectron
VECTRON INTERNATIONAL
VECTRON INTL
Vitesse Microsemi
Vitesse / Microsemi

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted