Product Information

MAPRST0912-50

MAPRST0912-50 electronic component of MACOM

Datasheet
MACOM RF Bipolar Transistors 960-1215MHz 50W Gain: 9.1dB min

Manufacturer: MACOM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 533.8875 ea
Line Total: USD 533.8875

19 - Global Stock
Ships to you between
Thu. 11 Apr to Mon. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1
1 : USD 533.8875
10 : USD 515.614
20 : USD 506.7129
60 : USD 506.207
260 : USD 506.1955
2500 : USD 506.184

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
MAAP-011027-000SMB electronic component of MACOM MAAP-011027-000SMB

RF Amplifier Amplifier,Sample Brd Asy,8W,5.2-5.9GHz
Stock : 0

A66-3 electronic component of MACOM A66-3

RF Amplifier 10-1000MHz NF 3.0dB Gain 26.0dB
Stock : 1

MAADSS0008SMB electronic component of MACOM MAADSS0008SMB

RF Development Tools Sample Board Assembly, SOT-25
Stock : 0

MAAL-010705-001SMB electronic component of MACOM MAAL-010705-001SMB

RF Development Tools Sample Board,Assy,2mmPDFN-8LD
Stock : 0

MA46H204-1056 electronic component of MACOM MA46H204-1056

MACOM Varactor Diodes Brkdn V 30V min. Gamma .48-.5
Stock : 35

M8TH electronic component of MACOM M8TH

Up/Down Conv Mixer 2GHz 4-Pin TO-8
Stock : 0

DS-109-PIN electronic component of MACOM DS-109-PIN

MACOM Signal Conditioning 10-500MHz 50 ohm IL .6dB max
Stock : 10

AL7S electronic component of MACOM AL7S

AL7S
Stock : 1

M85C electronic component of MACOM M85C

RF Mixer Mixer,Microwave
Stock : 1

A57 electronic component of MACOM A57

RF Amplifier 10-500MHz NF 4.8dB Gain 14.7dB
Stock : 1

Image Description
MS1001 electronic component of Advanced Semiconductor MS1001

Transistors RF Bipolar RF Transistor
Stock : 4

BFP620H7764XTSA1 electronic component of Infineon BFP620H7764XTSA1

RF Bipolar Transistors RF BIP TRANSISTOR
Stock : 6000

BFU530XRR electronic component of NXP BFU530XRR

NXP Semiconductors RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor
Stock : 0

SD1275-01 electronic component of Advanced Semiconductor SD1275-01

Transistors RF Bipolar RF Transistor
Stock : 0

2N6439 electronic component of Advanced Semiconductor 2N6439

Transistors RF Bipolar RF Transistor
Stock : 0

MAPRST0912-350 electronic component of MACOM MAPRST0912-350

Transistors RF Bipolar 960-1215MHz 350W Gain: 9.4dB min
Stock : 3

BLX15 electronic component of Advanced Semiconductor BLX15

Transistors RF Bipolar RF Transistor
Stock : 0

MRF422 electronic component of MACOM MRF422

RF Bipolar Transistors 2-30MHz 150Watts 28Volt Gain 10dB
Stock : 468

NSVF3007SG3T1G electronic component of ON Semiconductor NSVF3007SG3T1G

RF Bipolar Transistors RF-TR 12V 30MA FT=8G NPN
Stock : 5849

MRF317 electronic component of MACOM MRF317

RF Bipolar Transistors
Stock : 5

MAPRST0912-50 Avionics Pulsed Power Transistor Rev. V2 50 W, 960 - 1215 MHz, 10 s Pulse, 10% Duty Features Outline Drawing NPN Silicon Microwave Power Transistors Common Base Configuration Broadband Class C Operation High Efficiency Inter-Digitized Geometry Diffused Emitter Ballasting Resistors Gold Metallization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package RoHS* Compliant Description The MAPRST0912-50 is a RF power transistor. These high power transistors are ideal for avionics, communications, radar, and industrial, scientific, and medical applications. Electrical Specifications: T = +25C 5C, V = 50 V, P = 6.2 W (unless otherwise noted) A CC IN Parameter Test Conditions Symbol Min. Max. Units Collector-Emitter Breakdown Voltage I = 15 mA BV 65 - V C CES Collector-Emitter Leakage Current V = 40 V I - 2.0 mA CE CES Thermal Resistance F = 960, 1090, 1215 MHz R - 0.80 C/W TH(JC) Output Power F = 960, 1090, 1215 MHz P 50 - W O Power Gain F = 960, 1090, 1215 MHz G 9.1 - dB P Input Return Loss F = 960, 1090, 1215 MHz RL 40 - dB Collector Efficiency F = 960, 1090, 1215 MHz - -9 % C Load Mismatch Stability F = 960 MHz VSWR-S - 10:1 - Load Mismatch Tolerance F = 960, 1090, 1215 MHz VSWR-T - 1.5:1 - * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAPRST0912-50 Avionics Pulsed Power Transistor Rev. V2 50 W, 960 - 1215 MHz, 10 s Pulse, 10% Duty Typical RF Performance P1dB Overdrive Freq. Pin Pout Gain Gain Ic Eff RL VSWR-S VSWR-T (MHz) (W) (W) (dB) (A) (%) (dB) (1.5:1) (10:1) (dB) Pout (W) Po 960 6.2 65.9 10.25 - 2.66 49.6 -22.2 S P 73.4 0.48 1090 6.2 61.9 9.98 - 2.58 48.0 -15.2 S - 68.7 0.45 1215 6.2 64.6 10.16 0.35 2.50 51.6 -15.9 S - 74.8 0.63 Note: Po(dB) is the difference between Pout at 1dB overdrive and Pout at Pin = 6.2 W. Absolute Maximum Ratings +25C Output Power vs. Input Power 80 Parameter Rating Collector-Emitter Voltage (V ) 65 V CES 70 Emitter-Base Voltage (V ) 3.0 V EBO 60 Collector Current (Peak) (I ) 5.3 A C Power Dissipation +25C (P ) 220 kW TOT 960 MHz 50 1090 MHz 1215 MHz Storage Temperature (T ) -65C to +200C STG 40 Junction Temperature (T ) 200C J 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 Input Power (W) Gain vs. Frequency Collector Efficiency vs. Frequency 10.8 60 10.4 54 10.0 48 9.6 42 9.2 36 8.8 30 950 1000 1050 1100 1150 1200 1250 950 1000 1050 1100 1150 1200 1250 Frequency (MHz) Frequency (MHz) 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Aeroflex / Metelics (MACOM)
Aeroflex Metelics
M/A-COM
M/A-COM / TYCO
M/A-COM Technology Solutions
MA/COM
MACOM
Nitronex

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted