Product Information

LSG65R950HT

LSG65R950HT electronic component of Lonten Semiconductor

Datasheet
MOSFET N Trench 650V 4A 4.5V @ 250uA 950 mΩ @ 2A,10V TO-252 RoHS
Manufacturer: Lonten Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5048 ea
Line Total: USD 0.5

1900 - Global Stock
Ships to you between
Thu. 09 May to Tue. 14 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1897 - Global Stock


Ships to you between
Thu. 09 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

LSG65R950HT
Lonten Semiconductor

1 : USD 0.4636
10 : USD 0.365
30 : USD 0.3236
100 : USD 0.2703
500 : USD 0.2487
1000 : USD 0.2328

Read More Specifications

     
Manufacturer
Product Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The LSG65R950HT is a MOSFET N Trench 650V P-Channel Enhancement Mode Power Field Effect Transistor from Lonten Semiconductor. It has a 4.5V @ 250uA threshold voltage, 950 mΩ @ 2A maximum drain-source on resistance, and 10V steady state drain voltage. The transistor comes in a TO-252 RoHS package and features a maximum Drain Current of 4A. This device is ideal for applications requiring high current switching in a smaller space.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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