Product Information

LSG65R650HT

LSG65R650HT electronic component of Lonten Semiconductor

Datasheet
MOSFET N Trench 650V 7A 4.5V @ 250uA 650 mΩ @ 3.5A,10V TO-252 RoHS

Manufacturer: Lonten Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.8923 ea
Line Total: USD 1.8923

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2356 - Global Stock


Ships to you between
Thu. 11 Apr to Tue. 16 Apr

MOQ : 1
Multiples : 1

Stock Image

LSG65R650HT
Lonten Semiconductor

1 : USD 1.8449
10 : USD 1.5293
30 : USD 1.3553
100 : USD 1.1578
500 : USD 1.0718
1000 : USD 1.0331

     
Manufacturer
Product Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The LSG65R650HT with MOSFET N Trench 650V 7A 4.5V @ 250uA 650 mΩ @ 3.5A,10V TO-252 RoHS is a low-voltage N-Channel Vertical MOSFET power switch manufactured by Lonten Semiconductor. With an on-state Rds(on) of 650 mO, it allows a maximum current of 7A which simplifies circuit designs. The part is sealed in a TO-252 package that is RoHS compliant, allowing it to be used in a variety of applications. Its nominal drain-source voltage is 650V and its drain current is 3.5 Amps at 10 Volts. Other features include: a breakdown voltage of 4.5V @ 250µA and a Gate-source threshold voltage of 1.2V – 2.3V typical. It is suitable for a wide range of applications such as Motor Controls, Energy Efficient Lighting, and various other power switching circuits. The LSG65R650HT is an excellent choice for high efficiency and cost-effectiveness.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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