APA3010P3BT-GX

APA3010P3BT-GX 3.0 mm x 1.0 mm Right Angle Phototransistor DESCRIPTION PACKAGE DIMENSIONS Made with NPN silicon phototransistor chips FEATURES 3.0 x 2.0 x 1.0 mm right angle SMD LED, 1.0 mm thickness Mechanically and spectrally matched to the infrared emitting LED lamp Blue transparent lens Package: 2000 pcs / reel Moisture sensitivity level: 3 Tinned pads for improved solderability Halogen-free RoHS compliant APPLICATIONS Infrared applied systems Optoelectronic switches Photodetector control circuits Sensor technology RECOMMENDED SOLDERING PATTERN (units : mm tolerance : 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.15(0.006 ) unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. ABSOLUTE MAXIMUM RATINGS at T =25C A Parameter Max.Ratings Units Collector-to-Emitter Voltage 30 V Emitter-to-Collector Voltage 5 V Power Dissipation at(or below) 25C Free Air Temperature 100 mW Operating Temperature -40 to +85 C Storage Temperature -40 to +85 C Note: 1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity Ref JEDEC/JESD625-A and JEDEC/J-STD-033. Page 1 / 4 2021 Kingbright. All Rights Reserved. Spec No: DSAL3679 / 1203000588 Rev No: V.12 Date: 01/04/2021 APA3010P3BT-GX ELECTRICAL / OPTICAL CHARACTERISTICS at T =25C A Parameter Symbol Min. Typ. Max. Units Test Conditions I = 100A C Collector-to-Emitter Breakdown Voltage V 30 - - V 2 BR CEO E = 0mW/cm e I = 100A E Emitter-to-Collector Breakdown Voltage V 5 - - V BR ECO 2 E = 0mW/cm e I = 2mA C Collector-to-Emitter Saturation Voltage V - - 0.8 V CE (SAT) 2 E = 20mW/cm e V = 10V CE Collector Dark Current I - - 100 nA CEO 2 E = 0mW/cm e Rise Time(10% to 90%) T - 15 - S R V = 5V CE I = 1mA C R = 1000 L Fall Time(90% to 10%) T - 15 - S F V = 5V CE 2 On State Collector Current I 0.1 0.3 - mA E = 1mW/cm (ON ) e = 940nm Range of spectral bandwidth 670 - 1070 nm - 0.1 Wavelength of peak Sensitivity - 940 - nm - p 21/2 Angle of half sensitivity - 160 - deg - TECHNICAL DATA RELATIVE SPECTRAL SENSITIVITY vs. WAVELENGTH RELATIVE RADIANT SENSITIVITY vs. ANGULAR DISPLACEMENT 100% 0 -15 15 T = 25 C a T = 25 C a -30 30 80% -45 45 60% 60 -60 40% 20% 75 -75 0% 600 700 800 900 1000 1100 1200 -90 90 Wavelength (nm) 1.0 0.5 0.0 0.5 1.0 Page 2 / 4 2021 Kingbright. All Rights Reserved. Spec No: DSAL3679 / 1203000588 Rev No: V.12 Date: 01/04/2021 Relative spectral sensitivity (a. u.) Relative sensitivity