TM
V I V t
CES C25 CE(sat) fi
HiPerFAST
IXGK 50N50BU1
500 V 75 A 2.3 V 100ns
IGBT with Diode
600 V 75 A 2.5 V 120ns
IXGK 50N60BU1
Combi Pack
Preliminary data
Symbol Test Conditions Maximum Ratings TO-264 AA
50N50 50N60
V T = 25C to 150C 500 600 V
CES J
V T = 25C to 150C; R = 1 M 500 600 V
CGR J GE
G
V Continuous 20 20 V
GES C
E
V Transient 30 30 V
GEM
I T = 25C7575A
G = Gate, C = Collector,
C25 C
I T = 90C5050A
E = Emitter, TAB = Collector
C90 C
I T = 25C, 1 ms 200 200 A
CM C
SSOA V = 15 V, T = 125C, R = 10 I = 100 A
GE VJ G CM
(RBSOA) Clamped inductive load, L = 30 H @ 0.8 V
CES Features
International standard package
P T = 25C 300 300 W
C C
JEDEC TO-264 AA
High frequency IGBT and anti-
T -55 ... +150 C
J
parallel FRED in one package
T 150 C
JM
TM
2nd generation HDMOS process
T -55 ... +150 C
stg
Low V
CE(sat)
M Mounting torque (M4) 0.9/6 Nm/lb.in.
- for minimum on-state conduction
d
losses
Weight 10 g
MOS Gate turn-on
Maximum lead temperature for soldering 300 C
- drive simplicity
1.6 mm (0.062 in.) from case for 10 s
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
AC motor speed control
Symbol Test Conditions Characteristic Values
DC servo and robot drives
(T = 25C, unless otherwise specified)
J
DC choppers
min. typ. max.
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
BV I = 500 A, V = 0 V 50N50 500 V
CES C GE
power supplies
50N60 600 V
V I = 500 A, V = V 2.5 5.5 V
GE(th) C CE GE
Advantages
I V = 0.8 V T = 25C 250 A
CES CE CES J
V = 0 V T = 125C15mA Space savings (two devices in one
GE J
package)
I V = 0 V, V = 20 V 100 nA
Easy to mount with 1 screw
GES CE GE
(isolated mounting screw hole)
V I = I , V = 15 V 50N50BU1 2.3 V
CE(sat) C C90 GE Reduces assembly time and cost
50N60BU1 2.5 V
High power density
IXYS reserves the right to change limits, test conditions, and dimensions. 97510A(1/98)
2000 IXYS All rights reserved
1 - 6IXGK50N50BU1 IXGK50N60BU1
Symbol Test Conditions Characteristic Values
TO-264 AA Outline
(T = 25C, unless otherwise specified)
J
min. typ. max.
g I = I ; V = 10 V, 25 35 S
fs C C90 CE
Pulse test, t 300 s, duty cycle 2 %
Remarks: Add capacitance from
IXGH50N60B (DS95585B)
Q 200 nC
g
Q I = I , V = 15 V, V = 0.5 V 50 nC
ge C C90 GE CE CES
Q 70 nC
gc
t 50 ns
d(on)
Inductive load, T = 25C
J
Dim. Millimeter Inches
t 50 ns
ri Min. Max. Min. Max.
I = I , V = 15 V, L = 100 H,
C C90 GE
A 4.82 5.13 .190 .202
t V = 0.8 V , R = R = 2.7 110 ns
d(off) CE CES G off
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
t Remarks: Switching times may increase 50N50 80 150 ns
fi
b 1.12 1.42 .044 .056
for V (Clamp) > 0.8 V , higher T or 50N60 150 ns
b1 2.39 2.69 .094 .106
CE CES J
b2 2.90 3.09 .114 .122
E increased R 50N50 1.8 mJ
off G
c 0.53 0.83 .021 .033
50N60 3.0 mJ
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
t 50 ns
Inductive load, T = 125C
d(on) e 5.46 BSC .215 BSC
J
J 0.00 0.25 .000 .010
t 60 ns
I = I , V = 15 V, L = 100 H
ri
C C90 GE
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
E V = 0.8 V , R = R = 2.7 3mJ
on CE CES G off
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
t Remarks: Switching times may increase 200 ns
d(off)
Q 6.07 6.27 .239 .247
for V (Clamp) > 0.8 V , higher T or
CE CES J Q1 8.38 8.69 .330 .342
t 50N50 100 ns
fi
increased R R 3.81 4.32 .150 .170
G 50N60 250
R1 1.78 2.29 .070 .090
E 50N50 2.6 mJ
S 6.04 6.30 .238 .248
off
T 1.57 1.83 .062 .072
50N60 4.2 mJ
R 0.42 K/W
thJC
R 0.15 K/W
thCK
Reverse Diode (FRED) Characteristic Values
(T = 25C, unless otherwise specified)
J
Symbol Test Conditions min. typ. max.
V I = I , V = 0 V, 1.7 V
F F C90 GE
Pulse test, t 300 s, duty cycle d 2 %
I I = I , V = 0 V, -di /dt = 480 A/s1933A
RM F C90 GE F
t V = 360 V T = 125C 175 ns
rr R J
I = 1 A; -di/dt = 200 A/s; V = 30 V T = 25C35 50ns
F R J
R 0.75 K/W
thJC
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
2000 IXYS All rights reserved
2 - 6
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025