Product Information

IX4351NE

IX4351NE electronic component of IXYS

Datasheet
Gate Drivers 9A Low Side SiC MOSFET & IGBT Driver

Manufacturer: IXYS
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.0015 ea
Line Total: USD 3

568 - Global Stock
Ships to you between
Thu. 02 May to Mon. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
568 - Global Stock


Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 1
Multiples : 1

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IX4351NE
IXYS

1 : USD 3.0015
10 : USD 2.622
100 : USD 2.277
250 : USD 2.1735
500 : USD 1.978
1000 : USD 1.7365
2500 : USD 1.7365
5000 : USD 1.7135

     
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RoHS - XON
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IX4351NE 9A Low Side SiC MOSFET & IGBT Driver INTEGRATED CIRCUITS DIVISION Features Description Separate 9A peak source and sink outputs The IX4351NE is designed specifically to drive SiC Operating Voltage Range: -10V to +25V MOSFETs and high power IGBTs. Separate 9A Internal negative charge pump regulator for source and sink outputs allow for tailored turn-on and selectable negative gate drive bias turn-off timing while minimizing switching losses. An Desaturation detection with soft shutdown sink driver internal negative charge regulator provides a TTL and CMOS compatible input selectable negative gate drive bias for improved dV/dt Under Voltage lockout (UVLO) immunity and faster turn-off. Thermal shutdown Open drain FAULT output Desaturation detection circuitry detects an over current condition of the SiC MOSFET and initiates a Applications soft turn off, thus preventing a potentially damaging Driving SiC MOSFETs and IGBTs dV/dt event. The logic input is TTL and CMOS On-board charger and DC charging station compatible this input does not need to be level shifted Industrial inverters even with a negative gate drive bias voltage. PFC, AC/DC and DC/DC converters Protection features include UVLO and thermal shutdown detection. An open drain FAULT output signals a fault condition to the microcontroller. IX4351 Functional Block Diagram The IX4351NE is rated for operational temperature range of -40C to +125C,and is available in a V DD thermally enhanced 16-pin power SOIC package. 4 DESAT Ordering Information 6 IN 6.8V V 2 DD Part Descript io n V 3 DD 16-Pin power SOIC with exposed thermal pad. Gate and 1 OUTSRC IX4351NE Control In tubes (50/Tube) 5 16 FAULT OUTSNK Logic 16-Pin power SOIC with exposed thermal pad. V 15 SS IX4351NETR 10 V In Tape & Reel (2000/Reel) SS 14 OUTSOFT V DD V SS 4.6V 13 INSOFT V 8 REG Regulator 2.6V V DD Charge SET 9 Pump 12 CAP Control 11 GND 7 COM DS-IX4351NE-R01 www.ixysic.com 1IX4351NE INTEGRATED CIRCUITS DIVISION 1. Specifications 3 1.1 Package Pinout: 16-Pin SOIC Package . 3 1.2 Pin Description: 16-Pin SOIC Package . 3 1.3 Absolute Maximum Ratings (With respect to V unless otherwise specified) . 4 COM 1.4 Recommended Operating Conditions 4 1.5 Electrical Characteristics 4 1.6 Thermal Characteristics . 6 2. Functional Description . 7 2.1 Logic Input (IN) . 7 2.2 Gate Drive Outputs (OUTSRC and OUTSNK) 7 2.3 4.6 Volt Regulator (VREG) . 7 2.4 Negative V Charge Pump Regulator . 8 SS 2.5 Desaturation Detection and Protection . 8 2.6 Thermal Shutdown . 8 2.7 FAULT Output 8 3. Manufacturing Information 9 3.1 Moisture Sensitivity 9 3.2 ESD Sensitivity . 9 3.3 Soldering Profile . 9 3.4 Board Wash 9 3.5 Mechanical Dimensions 10 2 www.ixysic.com R01

Tariff Desc

8542.39.23 No ..Linear/analogue and peripheral integrated circuits, timers, voltage regulators, A/D and D/A converters, telecommunication and modem integrated circuits, other than board level products Free

Electronic integrated circuits- Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
CLR
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR

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