Product Information

CS19-12ho1S

CS19-12ho1S electronic component of IXYS

Datasheet
IXYS SCRs 19 Amps 1200V

Manufacturer: IXYS
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

800: USD 1.2774 ea
Line Total: USD 1021.92

0 - Global Stock
MOQ: 800  Multiples: 800
Pack Size: 800
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 800
Multiples : 800
800 : USD 1.3112

0 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1
1 : USD 6.885
10 : USD 2.484
25 : USD 2.3436
100 : USD 1.998
500 : USD 1.6416

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Series
Breakover Current IBO Max
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
Application
Current Rating
Features
Height
Length
Operating Temperature Range
Type
Width
Cnhts
Hts Code
Product Type
Subcategory
Taric
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CS19-12ho1S V = 1200 V RRM High Efficiency Thyristor I = 20 A TAV V = 1.31 V T Single Thyristor Part number CS19-12ho1S Marking on Product: CS19-12ho1S Backside: anode 4/2 1 3 Features / Advantages: Applications: Package: TO-263 (D2Pak) Thyristor for line frequency Line rectifying 50/60 Hz Industry standard outline Planar passivated chip Softstart AC motor control RoHS compliant Long-term stability DC Motor control Epoxy meets UL 94V-0 Power converter AC power control Lighting and temperature control Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190218d 2019 IXYS all rights reservedCS19-12ho1S Ratings Thyristor Symbol Definition Conditions min. typ. max. Unit T = 25C 1300 V V max. non-repetitive reverse/forward blocking voltage RSM/DSM VJ T = 25C 1200 V V max. repetitive reverse/forward blocking voltage RRM/DRM VJ I reverse current, drain current V = 1 2 0 0 V T = 25C 50 A R/D R/D VJ V = 1 2 0 0 V T = 1 2 5 C 1 mA R/D VJ forward voltage drop V I = 2 0 A T = 25C 1.32 V T T VJ I = 4 0 A 1.65 V T T = C 1.31 V I = 2 0 A 125 T VJ I = 4 0 A 1.73 V T average forward current T = 1 1 0 C T = 1 2 5 C 20 A I TAV C VJ RMS forward current I 180 sine 31 A T(RMS) V T = 1 2 5 C 0.86 V threshold voltage T0 VJ for power loss calculation only slope resistance r 22 m T 0.7 K/W R thermal resistance junction to case thJC thermal resistance case to heatsink R 0.50 K/W thCH P total power dissipation T = 25C 170 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 180 A I TSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 195 A R t = 10 ms (50 Hz), sine T = 1 2 5 C A 155 VJ t = 8,3 ms (60 Hz), sine V = 0 V 165 A R value for fusing It t = 10 ms (50 Hz), sine T = 45C 160 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 160 As R t = 10 ms (50 Hz), sine T = 1 2 5 C 120 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 115 As R junction capacitance V = 2 3 0 V f = 1 MHz T = 25C 9 pF C J R VJ P max. gate power dissipation t = 30 s T = 1 2 5 C 5 W GM P C t = 300 s 2.5 W P 0.5 W P average gate power dissipation GAV critical rate of rise of current T = 150C f = 50 Hz repetitive, I = 60 A 150 (di/dt) A/s cr VJ T 0.15 t = 2 0 0 s di /dt = A/s P G I = 0.15A V = V non-repet., I = 20 A 500 A/s G DRM T critical rate of rise of voltage V = V T = 150C 500 V/s (dv/dt) VJ cr DRM R = method 1 (linear voltage rise) GK gate trigger voltage V V = 6 V T = 25C 1.5 V GT D VJ T = -40C 2.5 V VJ gate trigger current V = 6 V T = 25C 28 mA I VJ GT D T = -40C 50 mA VJ gate non-trigger voltage V V = V T = 150C 0.2 V GD D DRM VJ gate non-trigger current I 3 mA GD latching current t = 10 s T = 25C 75 mA I VJ L p I = 0.1A di /dt = 0.1 A/s G G holding current I V = 6 V R = T = 25C 50 mA H D GK VJ gate controlled delay time t V = V T = 25C 2 s VJ gd D DRM I = 0.1A di /dt = 0.1 A/s G G turn-off time V = 100 V I = 20 A V = V T =100 C 150 s t q R T DRM VJ di/dt = 10 A/s dv/dt = 20 V/s t = 200 s p IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190218d 2019 IXYS all rights reserved

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
CLR
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR

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