Product Information

IS61WV5128FBLL-10TLI

IS61WV5128FBLL-10TLI electronic component of ISSI

Datasheet
SRAM 4Mb,High-Speed/Low Power,Async,512K x 8,10ns, 2.4v-3.6v, 44 Pin TSOP II, RoHS

Manufacturer: ISSI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.2435 ea
Line Total: USD 4.24

520 - Global Stock
Ships to you between
Thu. 02 May to Mon. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
43 - Global Stock


Ships to you between
Fri. 03 May to Wed. 08 May

MOQ : 1
Multiples : 1
1 : USD 5.8118
10 : USD 5.0537
30 : USD 4.6027
135 : USD 4.1451
540 : USD 3.9347
945 : USD 3.8402

520 - Global Stock


Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 1
Multiples : 1
1 : USD 4.2435
10 : USD 3.8525
100 : USD 3.358
270 : USD 3.3465
540 : USD 3.2315
1080 : USD 3.0705
2565 : USD 2.921
5130 : USD 2.898

     
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IS61/64WV5128FALL IS61/64WV5128FBLL APRIL 2018 512Kx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM KEY FEATURES DESCRIPTION High-speed access time: 8, 10ns, 12ns The ISSI IS61/64WV5128FALL/FBLL are high-speed, low Low Active Current: 35mA (Max., 10ns, I-temp) power, 4M bit static RAMs organized as 512K words by 8 Low Standby Current: 10 mA (Max., I-temp) ISSI bits. It is fabricated using s high-performance CMOS technology. Single power supply 1.65V-2.2V VDD(IS61/64WV5128FALL) This highly reliable process coupled with innovative circuit 2.4V-3.6V VDD (IS61/64WV5128FBLL) design techniques, yields high-performance and low power Three state outputs devices. Industrial and Automotive temperature support When CS is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be Lead-free available reduced down with CMOS input levels. FUNCTIONAL BLOCK DIAGRAM Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE ) controls both writing and reading of the memory. 512K x 8 MEMORY DECODER A0 A18 ARRAY The IS61/64WV5128FALL/FBLL are packaged in the JEDEC standard 44-pin TSOP (TYPE II), 36-pin SOJ and 36-ball VDD mini BGA (6mm x 8mm). GND I/O I/O0 I/O7 COLUMN I/O DATA CIRCUIT CS CONTROL OE CIRCUIT WE Copyright 2018 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc.- www.issi.com 1 Rev. A 04/27/2018 IS61/64WV5128FALL IS61/64WV5128FBLL PIN CONFIGURATIONS 36-Pin SOJ (Package Code: K) 44-Pin TSOP-II (Package Code: T) 1 NC 44 NC 1 NC A0 36 2 43 NC NC 2 35 A18 A1 3 42 NC A0 3 A2 34 A17 4 41 A18 A1 33 A16 A3 4 40 5 A17 A2 A4 5 32 A15 A16 6 39 A3 OE 31 CS 6 7 38 A15 A4 I/O7 I/O0 7 30 37 OE CS 8 I/O1 I/O6 29 8 9 I/O7 I/O0 36 9 28 VSS VDD 10 35 I/O6 I/O1 VDD VSS 10 27 VSS VDD 11 34 11 26 I/O5 I/O2 VSS 12 33 VDD 12 25 I/O4 I/O3 13 32 I/O5 I/O2 13 24 A14 WE I/O4 14 31 I/O3 A5 14 23 A13 WE 15 30 A14 A6 22 A12 15 A5 16 29 A13 A7 16 21 A11 A12 A6 17 28 A8 17 20 A10 A11 A7 18 27 A9 18 19 NC A10 19 26 A8 A9 20 25 NC 21 24 NC NC 23 NC NC 22 Integrated Silicon Solution, Inc.- www.issi.com 2 Rev. A 04/27/2018

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
Lumissil

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