Product Information

IAUT240N08S5N019ATMA1

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Datasheet
OptiMOS-5 N-channel Enhancement mode Power Transistor 1.9mΩ 230W 80V PG-HSOF-8 T/R
Manufacturer: Infineon



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From 5.2895

889 - Global Stock
Ships to you between
Thu. 20 May to Mon. 24 May

MOQ: 1 Multiples:1
Pack Size :   1
Availability Price Quantity
875 - Global Stock


Ships to you between Thu. 20 May to Mon. 24 May

MOQ : 1
Multiples : 1
1 : $ 12.6789
10 : $ 8.2895
25 : $ 7.8474
100 : $ 6.8842
250 : $ 6.6789
500 : $ 5.9053
1000 : $ 5.3053
2000 : $ 5.2895

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Manufacturer
Infineon
Product Category
MOSFET
RoHS - XON
Y Icon ROHS
Id - Continuous Drain Current
240 A
Vds - Drain-Source Breakdown Voltage
80 V
Rds On - Drain-Source Resistance
2 mOhms
Transistor Polarity
N-Channel
Vgs th - Gate-Source Threshold Voltage
2.2 V
Qg - Gate Charge
100 nC
Maximum Operating Temperature
+175 C
Pd - Power Dissipation
230 W
Mounting Style
Smd/Smt
Package / Case
HSOF-8
Packaging
Cut Tape
Configuration
Single
Technology
Si
Transistor Type
1 N-Channel
Brand
Infineon Technologies
Number Of Channels
1 Channel
Channel Mode
Enhancement
Fall Time
36 Ns
Minimum Operating Temperature
- 55 C
Product Type
Mosfet
Qualification
Aec-Q101
Rise Time
12 Ns
Factory Pack Quantity :
2000
Subcategory
Mosfets
Typical Turn-Off Delay Time
35 Ns
Typical Turn-On Delay Time
18 Ns
Vgs - Gate-Source Voltage
6 V
Cnhts
8541290000
Hts Code
8541290095
Mxhts
85412999
LoadingGif
Image
Mfr. Part No.
Description
Stock
Display Drivers & Controllers INDUSTRIAL IC'S
256
Display Drivers & Controllers FL LIGHTING
245
MOSFET MOSFET_(75V 120V(
1313
Image
Mfr. Part No.
Description
Stock
MOSFET 2N7002 Family
575
Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23
5
MOSFET MOSFET BVDSS: 8V-24V
945000
MOSFET MOSFET BVDSS
40000
MOSFET MOSFET BVDSS: 25V-30V
12500
MOSFET MOSFET BVDSS: 41V-60V
100000

IAUT240N08S5N019 OptiMOS?-5 Power-Transistor Product Summary V 80 V DS R 1.9 m ? DS(on) I 240 A D Features ? N-channel - Enhancement mode P/G-HSOF-8-1 Tab ? AEC qualified ? MSL1 up to 260?C peak reflow 8 1 ? 175?C operating temperature Tab ? Green product (RoHS compliant) 1 ? Ultra low Rds(on) 8 ? 100% Avalanche tested Type Package Marking P/G-HSOF-8-1 5N08019 IAUT240N08S5N019 Maximum ratings, at T =25 ?C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I Continuous drain current T =25?C, V =10V 240 A D C GS T =100 ?C, C 173 2) V =10 V GS 2) I T =25 ?C 960 Pulsed drain current D,pulse C 2) E I =120 A 400 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 240 A AS Gate source voltage V-?20V GS P T =25 ?C Power dissipation 230 W tot C T , T Operating and storage temperature - -55 ... +175 ?C j stg IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2017-07-20IAUT240N08S5N019 OptiMOS?-5 Power-Transistor Product Summary V 80 V DS R 1.9 m ? DS(on) I 240 A D Features ? N-channel - Enhancement mode P/G-HSOF-8-1 Tab ? AEC qualified ? MSL1 up to 260?C peak reflow 8 1 ? 175?C operating temperature Tab ? Green product (RoHS compliant) 1 ? Ultra low Rds(on) 8 ? 100% Avalanche tested Type Package Marking P/G-HSOF-8-1 5N08019 IAUT240N08S5N019 Maximum ratings, at T =25 ?C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I Continuous drain current T =25?C, V =10V 240 A D C GS T =100 ?C, C 173 2) V =10 V GS 2) I T =25 ?C 960 Pulsed drain current D,pulse C 2) E I =120 A 400 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 240 A AS Gate source voltage V-?20V GS P T =25 ?C Power dissipation 230 W tot C T , T Operating and storage temperature - -55 ... +175 ?C j stg IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2017-07-20IAUT240N08S5N019 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 0.65 K/W thJC Electrical characteristics, at T =25 ?C, unless otherwise specified j Static characteristics V =0 V, GS 2) V 80 - - V Drain-source breakdown voltage (BR)DSS I =1 mA D Gate threshold voltage V V =V , I =160 ?A 2.2 3 3.8 GS(th) DS GS D V =80 V, V =0 V, DS GS 2) I -0.1 1 ?A Zero gate voltage drain current DSS T =25 ?C j V =40 V, V =0 V, DS GS -1 20 2) T =85 ?C j I V =20 V, V =0 V - - 100 nA Gate-source leakage current GSS GS DS Drain-source on-state resistance R V =6 V, I =60 A -2.0 3.0m ? DS(on) GS D V =10 V, I =100 A -1.5 1.9 GS D Rev. 1.0 page 2 2017-07-20IAUT240N08S5N019 OptiMOS?-5 Power-Transistor Product Summary V 80 V DS R 1.9 m ? DS(on) I 240 A D Features ? N-channel - Enhancement mode P/G-HSOF-8-1 Tab ? AEC qualified ? MSL1 up to 260?C peak reflow 8 1 ? 175?C operating temperature Tab ? Green product (RoHS compliant) 1 ? Ultra low Rds(on) 8 ? 100% Avalanche tested Type Package Marking P/G-HSOF-8-1 5N08019 IAUT240N08S5N019 Maximum ratings, at T =25 ?C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I Continuous drain current T =25?C, V =10V 240 A D C GS T =100 ?C, C 173 2) V =10 V GS 2) I T =25 ?C 960 Pulsed drain current D,pulse C 2) E I =120 A 400 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 240 A AS Gate source voltage V-?20V GS P T =25 ?C Power dissipation 230 W tot C T , T Operating and storage temperature - -55 ... +175 ?C j stg IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2017-07-20IAUT240N08S5N019 OptiMOS?-5 Power-Transistor Product Summary V 80 V DS R 1.9 m ? DS(on) I 240 A D Features ? N-channel - Enhancement mode P/G-HSOF-8-1 Tab ? AEC qualified ? MSL1 up to 260?C peak reflow 8 1 ? 175?C operating temperature Tab ? Green product (RoHS compliant) 1 ? Ultra low Rds(on) 8 ? 100% Avalanche tested Type Package Marking P/G-HSOF-8-1 5N08019 IAUT240N08S5N019 Maximum ratings, at T =25 ?C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I Continuous drain current T =25?C, V =10V 240 A D C GS T =100 ?C, C 173 2) V =10 V GS 2) I T =25 ?C 960 Pulsed drain current D,pulse C 2) E I =120 A 400 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 240 A AS Gate source voltage V-?20V GS P T =25 ?C Power dissipation 230 W tot C T , T Operating and storage temperature - -55 ... +175 ?C j stg IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2017-07-20IAUT240N08S5N019 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 0.65 K/W thJC Electrical characteristics, at T =25 ?C, unless otherwise specified j Static characteristics V =0 V, GS 2) V 80 - - V Drain-source breakdown voltage (BR)DSS I =1 mA D Gate threshold voltage V V =V , I =160 ?A 2.2 3 3.8 GS(th) DS GS D V =80 V, V =0 V, DS GS 2) I -0.1 1 ?A Zero gate voltage drain current DSS T =25 ?C j V =40 V, V =0 V, DS GS -1 20 2) T =85 ?C j I V =20 V, V =0 V - - 100 nA Gate-source leakage current GSS GS DS Drain-source on-state resistance R V =6 V, I =60 A -2.0 3.0m ? DS(on) GS D V =10 V, I =100 A -1.5 1.9 GS D Rev. 1.0 page 2 2017-07-20IAUT240N08S5N019 Parameter Symbol Conditions Values Unit min. typ. max. 2) Dynamic characteristics Input capacitance C - 7126 9264 pF iss V =0 V, V =40 V, GS DS Output capacitance C - 1152 1498 oss f =1 MHz C Reverse transfer capacitance -51 76 rss t Turn-on delay time -18 - ns d(on) Rise time t -12 - r V =40 V, V =10 V, DD GS I =100 A, R =3.5 ? D G t Turn-off delay time -35 - d(off) t Fall time -36 - f 2) Gate Charge Characteristics Q Gate to source charge -32 42nC gs Gate to drain charge Q -22 33 gd V =40 V, I =100 A, DD D V =0 to 10 V GS Q Gate charge total - 100 130 g V Gate plateau voltage -4.7 - V plateau Reverse Diode 2) I - - 240 A Diode continous forward current S T =25 ?C C 2) I - - 960 Diode pulse current S,pulse V =0 V, I =100 A, GS F V Diode forward voltage -0.9 1.2V SD T =25 ?C j 2) t -71 - ns Reverse recovery time rr V =40 V, I =50A, R F di /dt =100 A/?s 2) F Q - 126 - nC Reverse recovery charge rr 1) Current is limited by bondwire; with an R = 0.65 K/W the chip is able to carry 246A at 25?C. thJC 2) Defined by design. Not subject to production test. Rev. 1.0 page 3 2017-07-20IAUT240N08S5N019 OptiMOS?-5 Power-Transistor Product Summary V 80 V DS R 1.9 m ? DS(on) I 240 A D Features ? N-channel - Enhancement mode P/G-HSOF-8-1 Tab ? AEC qualified ? MSL1 up to 260?C peak reflow 8 1 ? 175?C operating temperature Tab ? Green product (RoHS compliant) 1 ? Ultra low Rds(on) 8 ? 100% Avalanche tested Type Package Marking P/G-HSOF-8-1 5N08019 IAUT240N08S5N019 Maximum ratings, at T =25 ?C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I Continuous drain current T =25?C, V =10V 240 A D C GS T =100 ?C, C 173 2) V =10 V GS 2) I T =25 ?C 960 Pulsed drain current D,pulse C 2) E I =120 A 400 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 240 A AS Gate source voltage V-?20V GS P T =25 ?C Power dissipation 230 W tot C T , T Operating and storage temperature - -55 ... +175 ?C j stg IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2017-07-20IAUT240N08S5N019 OptiMOS?-5 Power-Transistor Product Summary V 80 V DS R 1.9 m ? DS(on) I 240 A D Features ? N-channel - Enhancement mode P/G-HSOF-8-1 Tab ? AEC qualified ? MSL1 up to 260?C peak reflow 8 1 ? 175?C operating temperature Tab ? Green product (RoHS compliant) 1 ? Ultra low Rds(on) 8 ? 100% Avalanche tested Type Package Marking P/G-HSOF-8-1 5N08019 IAUT240N08S5N019 Maximum ratings, at T =25 ?C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I Continuous drain current T =25?C, V =10V 240 A D C GS T =100 ?C, C 173 2) V =10 V GS 2) I T =25 ?C 960 Pulsed drain current D,pulse C 2) E I =120 A 400 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 240 A AS Gate source voltage V-?20V GS P T =25 ?C Power dissipation 230 W tot C T , T Operating and storage temperature - -55 ... +175 ?C j stg IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2017-07-20IAUT240N08S5N019 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 0.65 K/W thJC Electrical characteristics, at T =25 ?C, unless otherwise specified j Static characteristics V =0 V, GS 2) V 80 - - V Drain-source breakdown voltage (BR)DSS I =1 mA D Gate threshold voltage V V =V , I =160 ?A 2.2 3 3.8 GS(th) DS GS D V =80 V, V =0 V, DS GS 2) I -0.1 1 ?A Zero gate voltage drain current DSS T =25 ?C j V =40 V, V =0 V, DS GS -1 20 2) T =85 ?C j I V =20 V, V =0 V - - 100 nA Gate-source leakage current GSS GS DS Drain-source on-state resistance R V =6 V, I =60 A -2.0 3.0m ? DS(on) GS D V =10 V, I =100 A -1.5 1.9 GS D Rev. 1.0 page 2 2017-07-20IAUT240N08S5N019 OptiMOS?-5 Power-Transistor Product Summary V 80 V DS R 1.9 m ? DS(on) I 240 A D Features ? N-channel - Enhancement mode P/G-HSOF-8-1 Tab ? AEC qualified ? MSL1 up to 260?C peak reflow 8 1 ? 175?C operating temperature Tab ? Green product (RoHS compliant) 1 ? Ultra low Rds(on) 8 ? 100% Avalanche tested Type Package Marking P/G-HSOF-8-1 5N08019 IAUT240N08S5N019 Maximum ratings, at T =25 ?C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I Continuous drain current T =25?C, V =10V 240 A D C GS T =100 ?C, C 173 2) V =10 V GS 2) I T =25 ?C 960 Pulsed drain current D,pulse C 2) E I =120 A 400 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 240 A AS Gate source voltage V-?20V GS P T =25 ?C Power dissipation 230 W tot C T , T Operating and storage temperature - -55 ... +175 ?C j stg IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2017-07-20IAUT240N08S5N019 OptiMOS?-5 Power-Transistor Product Summary V 80 V DS R 1.9 m ? DS(on) I 240 A D Features ? N-channel - Enhancement mode P/G-HSOF-8-1 Tab ? AEC qualified ? MSL1 up to 260?C peak reflow 8 1 ? 175?C operating temperature Tab ? Green product (RoHS compliant) 1 ? Ultra low Rds(on) 8 ? 100% Avalanche tested Type Package Marking P/G-HSOF-8-1 5N08019 IAUT240N08S5N019 Maximum ratings, at T =25 ?C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I Continuous drain current T =25?C, V =10V 240 A D C GS T =100 ?C, C 173 2) V =10 V GS 2) I T =25 ?C 960 Pulsed drain current D,pulse C 2) E I =120 A 400 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 240 A AS Gate source voltage V-?20V GS P T =25 ?C Power dissipation 230 W tot C T , T Operating and storage temperature - -55 ... +175 ?C j stg IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2017-07-20IAUT240N08S5N019 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 0.65 K/W thJC Electrical characteristics, at T =25 ?C, unless otherwise specified j Static characteristics V =0 V, GS 2) V 80 - - V Drain-source breakdown voltage (BR)DSS I =1 mA D Gate threshold voltage V V =V , I =160 ?A 2.2 3 3.8 GS(th) DS GS D V =80 V, V =0 V, DS GS 2) I -0.1 1 ?A Zero gate voltage drain current DSS T =25 ?C j V =40 V, V =0 V, DS GS -1 20 2) T =85 ?C j I V =20 V, V =0 V - - 100 nA Gate-source leakage current GSS GS DS Drain-source on-state resistance R V =6 V, I =60 A -2.0 3.0m ? DS(on) GS D V =10 V, I =100 A -1.5 1.9 GS D Rev. 1.0 page 2 2017-07-20IAUT240N08S5N019 Parameter Symbol Conditions Values Unit min. typ. max. 2) Dynamic characteristics Input capacitance C - 7126 9264 pF iss V =0 V, V =40 V, GS DS Output capacitance C - 1152 1498 oss f =1 MHz C Reverse transfer capacitance -51 76 rss t Turn-on delay time -18 - ns d(on) Rise time t -12 - r V =40 V, V =10 V, DD GS I =100 A, R =3.5 ? D G t Turn-off delay time -35 - d(off) t Fall time -36 - f 2) Gate Charge Characteristics Q Gate to source charge -32 42nC gs Gate to drain charge Q -22 33 gd V =40 V, I =100 A, DD D V =0 to 10 V GS Q Gate charge total - 100 130 g V Gate plateau voltage -4.7 - V plateau Reverse Diode 2) I - - 240 A Diode continous forward current S T =25 ?C C 2) I - - 960 Diode pulse current S,pulse V =0 V, I =100 A, GS F V Diode forward voltage -0.9 1.2V SD T =25 ?C j 2) t -71 - ns Reverse recovery time rr V =40 V, I =50A, R F di /dt =100 A/?s 2) F Q - 126 - nC Reverse recovery charge rr 1) Current is limited by bondwire; with an R = 0.65 K/W the chip is able to carry 246A at 25?C. thJC 2) Defined by design. Not subject to production test. Rev. 1.0 page 3 2017-07-20

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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