FD1000R33HE3-K IHM-B /IGBT IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode V = 3300V CES I = 1000A / I = 2000A C nom CRM Potential Applications UPS UPS systems Medium voltage converters Chopper applications Traction drives Motor drives Wind turbines Electrical Features T = 150C T = 150C vj op vj op V V with positive temperature coefficient CEsat CEsat VCEsat Low VCEsat Low switching losses High DC stability High short-circuit capability Mechanical Features IHM B IHM B housing CTI > 600 Package with CTI > 600 (AlSiC) AlSiC base plate for increased thermal cycling capability Isolated base plate Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.2 www.infineon.com 2019-07-24FD1000R33HE3-K IGBT, - / IGBT, Brake-Chopper / Maximum Rated Values Tvj = -40C 3300 V V CES Collector-emitter voltage T = 150C 3300 vj TC = 95C, Tvj max = 150C ICDC 1000 A Continuous DC collector current t = 1 ms I 2000 A P CRM Repetitive peak collector current VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. IC = 1000 A Tvj = 25C 2,55 3,10 V Collector-emitter saturation voltage V = 15 V T = 125C V 3,00 3,45 V GE vj CE sat Tvj = 150C 3,15 V IC = 48,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage V = -15 / 15 V, V = 1800 V Q 28,0 C GE CE G Gate charge Tvj = 25C RGint 0,63 Internal gate resistor f = 1000 kHz, T = 25C, V = 25 V, V = 0 V C 190 nF vj CE GE ies Input capacitance f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 4,00 nF Reverse transfer capacitance - V = 3300 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current - VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current () IC = 1000 A, VCE = 1800 V Tvj = 25C 0,35 s t d on Turn-on delay time, inductive load V = -15 / 15 V T = 125C 0,38 s GE vj R = 0,71 , C = 220 nF T = 150C 0,38 s Gon GE vj () IC = 1000 A, VCE = 1800 V Tvj = 25C 0,35 s t r Rise time, inductive load V = -15 / 15 V T = 125C 0,38 s GE vj R = 0,71 , C = 220 nF T = 150C 0,38 s Gon GE vj () I = 1000 A, V = 1800 V T = 25C 3,00 s C CE vj t d off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 3,20 s GE vj R = 2,3 , C = 220 nF T = 150C 3,20 s Goff GE vj () I = 1000 A, V = 1800 V T = 25C 0,30 s C CE vj t f Fall time, inductive load V = -15 / 15 V T = 125C 0,35 s GE vj R = 2,3 , C = 220 nF T = 150C 0,35 s Goff GE vj () I = 1000 A, V = 1800 V, L = 85 nH T = 25C 1250 mJ C CE vj Turn-on energy loss per pulse di/dt = 3000 A/s (T = 150C) T = 125C 1700 mJ vj vj Eon V = -15 / 15 V, R = 0,71 T = 150C 1950 mJ GE Gon vj CGE = 220 nF ( I = 1000 A, V = 1800 V, L = 85 nH T = 25C 1050 mJ C CE vj Turn-off energy loss per pulse du/dt = 2100 V/s (T = 150C) T = 125C 1400 mJ vj vj E off VGE = -15 / 15 V, RGoff = 2,3 Tvj = 150C 1550 mJ C = 220 nF GE V 15 V, V = 2500 V GE CC I SC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 4300 A IGBT / per IGBT RthJC 11,0 K/kW Thermal resistance, junction to case IGBT / per IGBT R 14,5 K/kW thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.2 2019-07-24