Product Information

F4-50R12KS4

F4-50R12KS4 electronic component of Infineon

Datasheet
Infineon Technologies IGBT Modules N-CH 1.2KV 70A

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

F4-50R12KS4
Infineon

1 : USD 111.7908
10 : USD 104.544
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

F4-50R12KS4
Infineon

1 : USD 171.514
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Package / Case
Brand
Mounting Style
Maximum Gate Emitter Voltage
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Technische Information / Technical Information IGBT-Module F4-50R12KS4 IGBT-modules Vorlufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 70C, T = 150C I 50 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 70 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 100 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 150 P 355 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 50 A, V = 15 V T = 25C 3,20 3,75 V C GE vj V CE sat Collector-emitter saturation voltage I = 50 A, V = 15 V T = 125C 3,85 V C GE vj Gate-Schwellenspannung IC = 2,00 mA, VCE = VGE, Tvj = 25C VGEth 4,5 5,5 6,5 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 0,60 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 5,0 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 3,40 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,21 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 50 A, VCE = 600 V Tvj = 25C 0,12 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,13 s GE vj RGon = 13 Anstiegszeit, induktive Last IC = 50 A, VCE = 600 V Tvj = 25C 0,05 s t r Rise time, inductive load V = 15 V T = 125C 0,06 s GE vj RGon = 13 Abschaltverzgerungszeit, induktive Last IC = 50 A, VCE = 600 V Tvj = 25C 0,31 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,36 s GE vj RGoff = 13 Fallzeit, induktive Last IC = 50 A, VCE = 600 V Tvj = 25C 0,02 s t f Fall time, inductive load V = 15 V T = 125C 0,03 s GE vj RGoff = 13 Einschaltverlustenergie pro Puls IC = 50 A, VCE = 600 V, LS = 30 nH Tvj = 25C mJ Turn-on energy loss per pulse V = 15 V T = 125C E 6,00 mJ GE vj on RGon = 13 Abschaltverlustenergie pro Puls IC = 50 A, VCE = 600 V, LS = 30 nH Tvj = 25C mJ Turn-off energy loss per pulse V = 15 V T = 125C E 2,50 mJ GE vj off RGoff = 13 Kurzschluverhalten VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 300 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,35 K/W thJC Thermal resistance, junction to case Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-10-03 approved by: RS revision: 2.0 1Technische Information / Technical Information IGBT-Module F4-50R12KS4 IGBT-modules Vorlufige Daten Preliminary Data Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1200 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 50 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 100 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C It 1250 As R P vj It - value Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 50 A, V = 0 V T = 25C 2,00 2,55 V F GE vj VF Forward voltage I = 50 A, V = 0 V T = 125C 1,70 V F GE vj Rckstromspitze I = 50 A, - di /dt = 1300 A/s (T =125C) T = 25C 28,0 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 41,0 A R vj RM V = -15 V GE Sperrverzgerungsladung I = 50 A, - di /dt = 1300 A/s (T =125C) T = 25C 3,00 C F F vj vj Recovered charge V = 600 V T = 125C Q 8,50 C R vj r V = -15 V GE Abschaltenergie pro Puls I = 50 A, - di /dt = 1300 A/s (T =125C) T = 25C 1,10 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 3,10 mJ R vj rec V = -15 V GE Wrmewiderstand, Chip bis Gehuse pro Diode / per diode R 0,70 K/W thJC Thermal resistance, junction to case Temperatur im Schaltbetrieb Tvj op -40 125 C Temperature under switching conditions NTC-Widerstand / NTC-Thermistor Charakteristische Werte / Characteristic Values min. typ. max. Nennwiderstand T = 25C R 5,00 k C 25 Rated resistance Abweichung von R100 T = 100C, R = 493 R/R -5 5 % C 100 Deviation of R100 Verlustleistung T = 25C P 20,0 mW C 25 Power dissipation B-Wert R = R exp B (1/T - 1/(298,15 K)) B 3375 K 2 25 25/50 2 25/50 B-value B-Wert R = R exp B (1/T - 1/(298,15 K)) B t.b.d. K 2 25 25/80 2 25/80 B-value B-Wert R = R exp B (1/T - 1/(298,15 K)) B t.b.d. K 2 25 25/100 2 25/100 B-value Angaben gem gltiger Application Note. Specification according to the valid application note. prepared by: MK date of publication: 2013-10-03 approved by: RS revision: 2.0 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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