Product Information

F3L75R12W1H3_B27

F3L75R12W1H3_B27 electronic component of Infineon

Datasheet
IGBT Modules LOW POWER EASY

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 75.3102 ea
Line Total: USD 75.3102

196 - Global Stock
Ships to you between
Thu. 11 Apr to Mon. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
24 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1
1 : USD 64.515
10 : USD 64.515
24 : USD 60.2485

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Package / Case
Brand
Mounting Style
Maximum Gate Emitter Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Technische Information / Technical Information IGBT-Modul F3L75R12W1H3 B27 IGBT-Module J V = 1200V CES I = 75A / I = 150A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikationen 3-level-applications Solar Anwendungen Solar applications Elektrische Eigenschaften Electrical Features High Speed IGBT H3 High speed IGBT H3 Niederinduktives Design Low inductive design Niedrige Schaltverluste Low switching losses Niedriges V Low V CEsat CEsat Mechanische Eigenschaften Mechanical Features 3 kV AC 1min Isolationsfestigkeit 3 kV AC 1min insulation Al2O3 Substrat mit kleinem thermischen Al2O 3 substrate with low thermal resistance Widerstand Kompaktes Design Compact design PressFIT Verbindungstechnik PressFIT contact technology Robuste Montage durch integrierte Rugged mounting due to integrated mounting Befestigungsklammern clamps Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: CM date of publication: 2016-04-04 approved by: AKDA revision: V3.2 UL approved (E83335) 1Technische Information / Technical Information IGBT-Modul F3L75R12W1H3 B27 IGBT-Module IGBT, T1-T4 / IGBT, T1-T4 Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Implementierter Kollektor-Strom I 75 A CN Implemented collector current Kollektor-Dauergleichstrom TC = 100C, Tvj max = 175C IC nom 30 A Continuous DC collector current T = 25C, T = 175C I 45 A C vj max C Periodischer Kollektor-Spitzenstrom t = 1 ms I 150 A P CRM Repetitive peak collector current Gesamt-Verlustleistung TC = 25C, Tvj max = 175C Ptot 275 W Total power dissipation Gate-Emitter-Spitzenspannung V +/-20 V GES Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 30 A, V = 15 V T = 25C 1,45 1,70 V C GE vj Collector-emitter saturation voltage I = 30 A, V = 15 V T = 125C V 1,55 V C GE vj CE sat I = 30 A, V = 15 V T = 150C 1,60 V C GE vj Gate-Schwellenspannung IC = 2,60 mA, VCE = VGE, Tvj = 25C VGEth 5,00 5,80 6,50 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 0,57 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 0,0 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 4,40 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,235 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 30 A, VCE = 400 V Tvj = 25C 0,03 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,03 s GE vj RGon = 6,8 Tvj = 150C 0,03 s Anstiegszeit, induktive Last IC = 30 A, VCE = 400 V Tvj = 25C 0,01 s t r Rise time, inductive load V = 15 V T = 125C 0,012 s GE vj RGon = 6,8 Tvj = 150C 0,012 s Abschaltverzgerungszeit, induktive Last IC = 30 A, VCE = 400 V Tvj = 25C 0,25 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,32 s GE vj RGoff = 6,8 Tvj = 150C 0,34 s Fallzeit, induktive Last IC = 30 A, VCE = 400 V Tvj = 25C 0,025 s t f Fall time, inductive load V = 15 V T = 125C 0,04 s GE vj RGoff = 6,8 Tvj = 150C 0,045 s Einschaltverlustenergie pro Puls IC = 30 A, VCE = 400 V, LS = 40 nH Tvj = 25C 0,40 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 2600 A/s (T = 150C) T = 125C E 0,60 mJ GE vj vj on RGon = 6,8 Tvj = 150C 0,70 mJ Abschaltverlustenergie pro Puls IC = 30 A, VCE = 400 V, LS = 40 nH Tvj = 25C 1,05 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 2400 V/s (T = 150C) T = 125C E 1,60 mJ GE vj vj off RGoff = 6,8 Tvj = 150C 1,75 mJ Kurzschluverhalten VGE 15 V, VCC = 800 V I SC SC data V = V -L di/dt t 10 s, T = 150C 270 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,500 0,550 K/W thJC Thermal resistance, junction to case prepared by: CM date of publication: 2016-04-04 approved by: AKDA revision: V3.2 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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