Product Information

F3L100R12W2H3_B11

F3L100R12W2H3_B11 electronic component of Infineon

Datasheet
IGBT Modules LOW POWER EASY

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 79.3819 ea
Line Total: USD 79.3819

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1
1 : USD 81.1325
10 : USD 75.6585
30 : USD 73.2665

     
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RoHS - XON
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/ Technical Information IGBT- F3L100R12W2H3 B11 IGBT-Module EasyPACK 2 and PressFIT / NTC EasyPACK module with activeNeutral Point Clamp 2 topology and PressFIT / NTC / Preliminary Data VCES = 1200V I = 50A / I = 100A C nom CRM Typical Applications 3 3-Level-Applications Solar Applications Electrical Features IGBT H3 High Speed IGBT H3 Low Switching Losses Tvj op = 150C Tvj op = 150C Mechanical Features PressFIT PressFIT Contact Technology RoHS RoHS compliant Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: CM date of publication: 2015-02-03 approved by: AKDA revision: 2.3 UL approved (E83335) 1 / Technical Information IGBT- F3L100R12W2H3 B11 IGBT-Module Preliminary Data IGBT, T1 / T4 / IGBT, T1 / T4 / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage I 100 A CN Implemented collector current DC T = 100C, T = 175C I 50 A C vj max C nom Continuous DC collector current t = 1 ms I 200 A P CRM Repetitive peak collector current TC = 25C, Tvj max = 175C Ptot 375 W Total power dissipation V +/-20 V GES Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 50 A, V = 15 V T = 25C 1,55 1,75 V C GE vj Collector-emitter saturation voltage I = 50 A, V = 15 V T = 125C V 1,70 V C GE vj CE sat I = 50 A, V = 15 V T = 150C 1,75 V C GE vj IC = 3,80 mA, VCE = VGE, Tvj = 25C VGEth 5,05 5,80 6,45 V Gate threshold voltage V = -15 V ... +15 V Q 0,80 C GE G Gate charge Tvj = 25C RGint 7,5 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 6,15 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,345 nF Reverse transfer capacitance V = 1200 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current IC = 50 A, VCE = 400 V Tvj = 25C 0,13 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,14 s GE vj RGon = 1,1 Tvj = 150C 0,145 s IC = 50 A, VCE = 400 V Tvj = 25C 0,02 s t r Rise time, inductive load V = 15 V T = 125C 0,03 s GE vj RGon = 1,1 Tvj = 150C 0,03 s IC = 50 A, VCE = 400 V Tvj = 25C 0,30 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,38 s GE vj RGoff = 1,1 Tvj = 150C 0,40 s IC = 50 A, VCE = 400 V Tvj = 25C 0,03 s t f Fall time, inductive load V = 15 V T = 125C 0,06 s GE vj RGoff = 1,1 Tvj = 150C 0,065 s IC = 50 A, VCE = 400 V, LS = 25 nH Tvj = 25C 1,05 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 2200 A/s (T = 150C) T = 125C E 1,65 mJ GE vj vj on RGon = 1,1 Tvj = 150C 1,80 mJ IC = 50 A, VCE = 400 V, LS = 25 nH Tvj = 25C 1,60 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 2400 V/s (T = 150C)T = 125C E 2,60 mJ GE vj vj off RGoff = 1,1 Tvj = 150C 2,95 mJ VGE 15 V, VCC = 800 V I SC SC data V = V -L di/dt t 10 s, T = 150C 400 A CEmax CES sCE P vj IGBT / per IGBT R 0,30 0,40 K/W thJC Thermal resistance, junction to case prepared by: CM date of publication: 2015-02-03 approved by: AKDA revision: 2.3 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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