Product Information

BGB741L7ESDE6327XTSA1

BGB741L7ESDE6327XTSA1 electronic component of Infineon

Datasheet
High-Performance Broad Band LNA MMIC 6-Pin TSLP EP T/R

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

14: USD 0.5435 ea
Line Total: USD 7.609

122 - Global Stock
Ships to you between
Thu. 04 Apr to Wed. 10 Apr
MOQ: 14  Multiples: 1
Pack Size: 1
Availability Price Quantity
2730 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 28
Multiples : 1
28 : USD 1.328
50 : USD 1.2398
100 : USD 1.0574
200 : USD 1.0089
500 : USD 0.9085
1000 : USD 0.8147

     
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BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Product description The BGB741L7ESD is a high performance broadband low noise amplifier (LNA) MMIC based on Infineons silicon germanium carbon (SiGe:C) bipolar technology. Feature list Minimum noise figure NF = 1.05 dB at 2.4 GHz, 3 V, 10 mA min Supply voltage range V = 1.8 to 4.0 V at T = 25 C CC A High RF input power robustness of 20 dBm Integrated ESD protection: 2 kV HBM at all pins Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Satellite navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo) Wireless communications: WLAN 2.4 GHz and 5-6 GHz bands, broadband LTE or WiMAX LNA ISM applications like RKE and smart meter, as well as for emerging wireless applications such as DVB- Terrestrial Device information Table 1 Part information Product name / Package Pin configuration Marking Pieces / Reel Ordering code BGB741L7ESD / TSLP-7-1 1 = V 2 = V 3 = RF 4 = RF AY 7500 CC Bias in out BGB741L7ESDE6327XTSA1 5 = V 6 = Current 7 = Ground Ctrl adjust Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v3.0 www.infineon.com 2018-09-26BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Functional block diagram Functional block diagram This functional block diagram explains how the BGB707L7ESD is used. The RF power on/off function is controlled by applying V . By using an external resistor R , the pre-set current of 5.5 mA (when R is Ctrl ext ext omitted) can be increased. Base V and collector V voltages are applied to the respective pins RF and RF by B C in out external inductors L and L . B C DC, R ext V CC 6 5 4 1 6 internal V Current Adjust CC Biasing 2 5 7 LB Bias-Out On/Off In LC Out DC, 3 4 V ctrl RF-In RF-Out C C 1 2 3 in out GND 7 (on package backside) BGB7XXL7ESD functional block Figure 1 Functional block diagram Datasheet 2 v3.0 2018-09-26

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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