Product Information

BAV 170 E6327

BAV 170 E6327 electronic component of Infineon

Datasheet
Diodes - General Purpose, Power, Switching AF STD RECOVERY RECTIFIER 70V 0.2A

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.1827 ea
Line Total: USD 1.827

2910 - Global Stock
Ships to you between
Fri. 05 Apr to Thu. 11 Apr
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
2706 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 10
Multiples : 1

Stock Image

BAV 170 E6327
Infineon

10 : USD 0.1885
50 : USD 0.0806
250 : USD 0.0715
308 : USD 0.0533
846 : USD 0.0507

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Pd - Power Dissipation
Brand
Forward Continuous Current
Reverse Voltage
Forward Voltage Drop
Reverse Current Ir
Factory Pack Quantity :
Height
Length
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
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BAV170... Silicon Low Leakage Diode Array Low-leakage applications Medium speed switching times 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BAV170 Type Package Configuration Marking BAV170 SOT23 common cathode JXs Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 80 V Diode reverse voltage V R 85 Peak reverse voltage V RM 200 mA Forward current I F Non-repetitive peak surge forward current I A FSM t = 1 s 4.5 t = 1 s 0.5 250 mW Total power dissipation P tot T 35C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 460 thJS BAV170 1 Pb-containing package may be available upon special request 2 For calculation of R please refer to Application Note Thermal Resistance thJA 1 2007-04-19BAV170... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 85 - - V Breakdown voltage V (BR) I = 100 A (BR) Reverse current I nA R V = 75 V - - 5 R V = 75 V, T = 150 C - - 80 R A mV Forward voltage V F I = 1 mA - - 900 F I = 10 mA - - 1000 F I = 50 mA - - 1100 F I = 150 mA - - 1250 F AC Characteristics - 2 - pF Diode capacitance C T V = 0 V, f = 1 MHz R Reverse recovery time t - 0.6 1.5 s rr I = 10 mA, I = 10 mA, measured at I = 1mA, F R R R = 100 L Test circuit for reverse recovery time D.U.T. Pulse generator: t = 10 s, D = 0.05, t = 0.6ns, p r R = 50 i Oscillograph F Oscillograph: R = 50 , t = 0.35ns, C 1pF r EHN00019 2 2007-04-19

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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INFINEON (CYPRESS)
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Infineon Technologies
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