Product Information

HYG180N10LS1D

HYG180N10LS1D electronic component of HuaYi

Datasheet
TO-252-2L MOSFETs ROHS

Manufacturer: HuaYi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.26 ea
Line Total: USD 1.3

2037 - Global Stock
Ships to you between
Tue. 30 Apr to Fri. 03 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1896 - Global Stock


Ships to you between
Tue. 30 Apr to Fri. 03 May

MOQ : 5
Multiples : 5
5 : USD 0.26
50 : USD 0.2271
150 : USD 0.2129
500 : USD 0.1954
2500 : USD 0.1875
5000 : USD 0.1828

     
Manufacturer
Product Category
Category
Rohs
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
LoadingGif

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The HYG180N10LS1D is a MOSFET manufactured by HuaYi with a TO-252-2L package. It is a ROHS compliant part that has dual N-type FETs with an 10A Drain current rating. It has a maximum Drain-Source Voltage of 100V and a maximum Gate-Source Voltage of 20V. It features a low on-resistance of 0.13ohms. The part has a single ended gate structure and is lead free/halogen free.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
HUAYI
HuaYi Microelectronics

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