Product Information

HY4008B

HY4008B electronic component of HuaYi

Datasheet
MOSFET N Trench 80V 200A 4V @ 250uA 3.5 mΩ @ 100A,10V TO-263-2 RoHS

Manufacturer: HuaYi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0117 ea
Line Total: USD 1.01

834 - Global Stock
Ships to you between
Thu. 02 May to Tue. 07 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
266 - Global Stock


Ships to you between
Thu. 02 May to Tue. 07 May

MOQ : 1
Multiples : 1

Stock Image

HY4008B
HuaYi

1 : USD 1.1599
10 : USD 0.9725
30 : USD 0.872
100 : USD 0.7556
500 : USD 0.7043
800 : USD 0.6807

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The HY4008B is a MOSFET N Trench type device manufactured by HuaYi. It is rated for an 80 V maximum drain-source voltage and a maximum drain-source current of 200 A. It is capable of handling current up to 100 A, with a resistance of 3.5 mO at this current. The turn-on resistance voltage is 4 V, while the gate trigger current is 250 µA. It comes in a TO-263-2 RoHS package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
HUAYI
HuaYi Microelectronics

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