Product Information

HY1503C1

HY1503C1 electronic component of HuaYi

Datasheet
MOSFET N Trench 30V 34A (Tc) 3V @ 250uA 8.5 mΩ @ 10A,10V DFN3*3-8L RoHS

Manufacturer: HuaYi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2582 ea
Line Total: USD 0.2582

2471 - Global Stock
Ships to you between
Thu. 11 Apr to Tue. 16 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2417 - Global Stock


Ships to you between
Thu. 11 Apr to Tue. 16 Apr

MOQ : 1
Multiples : 1

Stock Image

HY1503C1
HuaYi

1 : USD 0.2125
10 : USD 0.1869
30 : USD 0.1758
100 : USD 0.162
500 : USD 0.1559
1000 : USD 0.1523

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The HY1503C1 is a MOSFET N-Trench power switch device specifically designed for the power supply market. It features a 30V breakdown voltage and 34A continuous drain current. The gate threshold voltage is 3V, and the drain-source on-resistance is 8.5 mO at 10A, 10V. The package is a 3x3-8L DFN, conforming to RoHS standards. It is manufactured by HuaYi.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
HUAYI
HuaYi Microelectronics

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