Product Information

IRLML6401

IRLML6401 electronic component of HUASHUO

Datasheet
MOSFET P Channel 20V 4.9A 1V @ 250uA 45mO @ 4.9A,4.5V SOT-23-3 RoHS

Manufacturer: HUASHUO
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0658 ea
Line Total: USD 0.658

2085 - Global Stock
Ships to you between
Thu. 11 Apr to Tue. 16 Apr
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
2318 - Global Stock


Ships to you between
Thu. 11 Apr to Tue. 16 Apr

MOQ : 10
Multiples : 10

Stock Image

IRLML6401
HUASHUO

10 : USD 0.0634
100 : USD 0.0517
300 : USD 0.0457
3000 : USD 0.0399
6000 : USD 0.0363
9000 : USD 0.0346

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The IRLML6401 is a P-Channel MOSFET made by HUASHUO in a SOT-23-3 package. It has a maximum drain-source voltage of 20V, continuous drain current of 4.9A, gate threshold voltage of 1V @ 250uA, maximum drain-source on-state resistance of 45mO @ 4.9A and a maximum gate-source voltage of 4.5V. The device is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
HUASHUO
Huashuo Semiconductor

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