Product Information

HSM4435

HSM4435 electronic component of HUASHUO

Datasheet
MOSFET P Channel 30V 9.5A 2.5V @ 250uA 20mO @ 6A,10V SOP-8 RoHS

Manufacturer: HUASHUO
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.196 ea
Line Total: USD 0.98

261 - Global Stock
Ships to you between
Thu. 09 May to Tue. 14 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
261 - Global Stock


Ships to you between
Thu. 09 May to Tue. 14 May

MOQ : 5
Multiples : 5

Stock Image

HSM4435
HUASHUO

5 : USD 0.196
50 : USD 0.1596
150 : USD 0.1439
500 : USD 0.1245
2500 : USD 0.1064
4000 : USD 0.1011

24 - Global Stock


Ships to you between
Thu. 09 May to Tue. 14 May

MOQ : 5
Multiples : 5

Stock Image

HSM4435
HUASHUO

5 : USD 0.1998
50 : USD 0.1637
150 : USD 0.1482
500 : USD 0.1161
2500 : USD 0.1075
5000 : USD 0.1023

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The HSM4435 with MOSFET P Channel 30V 9.5A 2.5V @ 250uA 20mO @ 6A,10V SOP-8 RoHS is a MOSFET transistor manufactured by Huashuo, which is a permanent Discrete Semiconductor. The device is a P-channel 30V 9.5A 2.5V @ 250uA 20mO @ 6A, 10V SOP-8 device, compliant with RoHS requirements. This MOSFET is suitable for applications such as power management, load switching and voltage regulation. It has a low on-state resistance (RDS(on)) of 20mO @ 6A,10V and a low gate-to-source threshold voltage of 2.5V @ 250uA. Its ability to handle high levels of current makes it suitable for applications where high power efficiency and low heat dissipation are desired.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
HUASHUO
Huashuo Semiconductor

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