Product Information

HSCB1216

HSCB1216 electronic component of HUASHUO

Datasheet
MOSFET P Channel 12V 16A 1.2V @ 250uA 15mΩ @ 8A,4.5V DFN2x2-6L RoHS

Manufacturer: HUASHUO
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1712 ea
Line Total: USD 0.86

116 - Global Stock
Ships to you between
Thu. 02 May to Tue. 07 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1940 - Global Stock


Ships to you between
Thu. 02 May to Tue. 07 May

MOQ : 5
Multiples : 5

Stock Image

HSCB1216
HUASHUO

5 : USD 0.1609
50 : USD 0.1311
150 : USD 0.1162
500 : USD 0.1051
3000 : USD 0.0833
6000 : USD 0.0788

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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ElectronicsThe HSCB1216 with MOSFET P Channel 12V 16A 1.2V @ 250uA 15mO @ 8A,4.5V DFN2x2-6L RoHS is a power semiconductor manufactured by HUASHUO Electronics. It is a P-channel MOSFET with a voltage rating of 12V, a current rating of 16A, a drive voltage of 1.2V, a gate leakage current of 250uA, a on-state resistance of 15mO, a forward transfer admittance of 8A, and a drive voltage of 4.5V. It is housed in a low-power, space-saving DFN2x2-6L package and is compliant with RoHS standards.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
HUASHUO
Huashuo Semiconductor

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