Product Information

CS4N65A3HD

CS4N65A3HD electronic component of Huajing

Datasheet
MOSFET N Trench 650V 4A (Tc) 4V @ 250uA 2.5 O @ 2A,10V TO-251 (I-PAK) RoHS
Manufacturer: Huajing
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4443 ea
Line Total: USD 0.44

8 - Global Stock
Ships to you between
Tue. 30 Apr to Fri. 03 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3 - Global Stock


Ships to you between
Tue. 30 Apr to Fri. 03 May

MOQ : 1
Multiples : 1

Stock Image

CS4N65A3HD
Huajing

1 : USD 0.4081
10 : USD 0.336
30 : USD 0.3051
100 : USD 0.2666
500 : USD 0.2495
1000 : USD 0.2391

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

MicroelectronicsThe CS4N65A3HD is a MOSFET N Trench with a 650V drain-source voltage and a 4A continuous drain current rating. It features a 4V drain-source on-state resistance at 250uA gate-source voltage, a 2.5 ohm drain-source on-state resistance at 2A gate-source voltage, and a 10V gate-source voltage range. This MOSFET is housed in a TO-251 (I-PAK) RoHS enclosure and is manufactured by Huajing Microelectronics.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Huajing may also be referenced as

HUAJING
Wuxi China Resources Huajing Microelectronics

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