Product Information

CS25N06B4

CS25N06B4 electronic component of Huajing

Datasheet
MOSFET N Trench 60V 25A (Tc) 3V @ 250uA 36 mΩ @ 18A,10V TO-252-2 (DPAK) RoHS

Manufacturer: Huajing
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4764 ea
Line Total: USD 0.48

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between
Thu. 02 May to Tue. 07 May

MOQ : 1
Multiples : 1

Stock Image

CS25N06B4
Huajing

1 : USD 0.4147
10 : USD 0.3534
30 : USD 0.3271
100 : USD 0.2945
500 : USD 0.2798
1000 : USD 0.2711

     
Manufacturer
Product Category
Packaging
Brand
Rohs
Package
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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TechnologyThe CS25N06B4 is a MOSFET N Trench 60V 25A (Tc) 3V @ 250uA 36 mO @ 18A, 10V TO-252-2 (DPAK) RoHS manufactured by Huajing Technology. This part is a P-Channel enhancement mode field-effect transistor (MOSFET) used for switching and amplifier applications. It has a low on-resistance and low gate charge, allowing for high-speed switching. The drain-source voltage (Vds) range is from 0V to 60V, and the drain current (Id) range is from 24A to 25A. It also has a maximum gate voltage (Vgs) of 10V and a breakdown voltage (BVds) of greater than 75V. The thermal resistance (Rth) of the part is 3V @ 250uA and 36 mO @ 18A. Finally, the package is a TO-252-2 (DPAK), making it RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
HUAJING
Wuxi China Resources Huajing Microelectronics

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