Product Information

3DD13003E1D-BD

3DD13003E1D-BD electronic component of Huajing

Transistors (NPN/PNP) NPN 1.3A 400V TO-92_Forming1 RoHS

Manufacturer: Huajing
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.071 ea
Line Total: USD 0.355

0 - Global Stock
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
0 - Global Stock


Ships to you between
Fri. 12 Apr to Wed. 17 Apr

MOQ : 5
Multiples : 5
5 : USD 0.071
50 : USD 0.0587
150 : USD 0.0524
500 : USD 0.0477
2500 : USD 0.0441
5000 : USD 0.0421

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Transistor Type
Current - Collector Ic Max
Voltage - Collector Emitter Breakdown Max
Power - Max
Collector Cut-Off Current Icbo
Collector-Emitter Breakdown Voltage Vceo
Power Dissipation Pd
Collector Current Ic
Dc Current Gain Hfe@Ic Vce
Transition Frequency Ft
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
Operating Temperature
LoadingGif

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The 3DD13003E1D-BD transistor manufactured by Huajing is a through-hole NPN type transistor with a rated current of 1.3A, a voltage rating of 400V, and a TO-92_Forming1 RoHS package. It is designed for switching and amplification applications. This transistor is suitable for use in low voltage, high current power switching and high frequency amplifier circuits. Its maximum collector-emitter voltage is 400V and its maximum collector current is 1.3A. This device is RoHS compliant and is suitable for use in industrial, automotive, and home applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
HUAJING
Wuxi China Resources Huajing Microelectronics

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