SEP8705-001

SEP8705 AlGaAs Infrared Emitting Diode FEATURES T-1 package 15 (nominal) beam angle 880 nm wavelength Consistent optical properties Higher output than GaAs at equivalent drive current Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105 photodarlington INFRA-55.TIF DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SEP8705 is an aluminum gallium arsenide infrared Tolerance 3 plc decimals 0.005(0.12) emitting diode transfer molded in a T-1 smoke gray 2 plc decimals 0.020(0.51) plastic package. Transfer molding of this device assures superior optical centerline performance compared to .200 (5.08) other molding processes. These devices typically .180 (4.57) .03(.76) .020 SQ. LEAD TYP exhibit 70% greater power intensity compared to GaAs (.51) devices at the same forward current. Lead lengths are .05(1.27) .050 staggered to provide a simple method of polarity CATHODE (1.27) identification. ANODE .125 (3.18) DIA155 .115 (2.92) DIA. (3.94) .500 MIN. (12.7) .250 (6.35) MAX. DIM 101.ds4 Honeywell reserves the right to make changes in order to improve design and 48 h supply the best products possible.SEP8705 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25C Free-Air Temperature unless otherwise noted) Continuous Forward Current 50 mA Power Dissipation 70 mW Operating Temperature Range -40C to 85C Storage Temperature Range -40C to 85C Soldering Temperature (5 sec) 240C Notes 1. Derate linearly from 25C free-air temperature at the rate of 0.18 mW/C. Honeywell reserves the right to make changes in order to improve design and 49 h supply the best products possible.