Product Information

SE3450-013

SE3450-013 electronic component of Honeywell

Datasheet
Infrared Emitters - High Power Infrared Sensors

Manufacturer: Honeywell
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 78.3468 ea
Line Total: USD 78.35

46 - Global Stock
Ships to you between
Fri. 26 Apr to Thu. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
46 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 10
Multiples : 1

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SE3450-013
Honeywell

10 : USD 3.725
100 : USD 3
300 : USD 2.8
500 : USD 2.7125
1000 : USD 2.4375
2500 : USD 2.3625
5000 : USD 2.1875
7500 : USD 2.15

     
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RoHS - XON
Icon ROHS
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Beam Angle
If - Forward Current
Vf - Forward Voltage
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Cnhts
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SE3450/5450 GaAs Infrared Emitting Diode FEATURES TO-46 metal can package Choice of flat window or lensed package 90 or 20 (nominal) beam angle option 935 nm wavelength Wide operating temperature range (55Cto+125C) Mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491phototransistor, SD3410/5410 photodarlington and SD5600 series Schmitt trigger INFRA-83.TIF DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SE3450/5450 series consists of a gallium arsenide Tolerance 3 plc decimals 0.005(0.12) infrared emitting diode mounted in a TO-46 metal can 2 plc decimals 0.020(0.51) package. The SE3450 series has flat window cans providing a wide beam angle, while the SE5450 series SE3450 has glass lensed cans providing a narrow beam angle. 45 .188 (4.77) The TO-46 packages offer high power dissipation DIA178 (4.52) .046(1.17) capability and are ideally suited for operation in hostile .500 .036(.91) .219 (5.56) DIA. environment. (12.70) .208 (5.28) MIN100(2.54)DIA 1 NOM 2 .048(1.22) .160 (4.06) .028(.71) .015 DIA137 (3.48) (0.36) .018 DIA. (.460) .153 (3.89) LEADS: .140 (3.56) (TAB) 1. CATHODE 2. ANODE (CASE) DIM 003a.ds4 SE5450 45 .188 (4.77) DIA178 (4.52) .046(1.17) .500 .036(.91) .219 (5.56) DIA. (12.70) .208 (5.28) MIN100(2.54)DIA 1 NOM 2 .048(1.22) .015 .160 (4.06) .028(.71) DIA. (0.36) .137 (3.48) .018 .200 DIA. LEADS: (.460) 5.08 1. CATHODE (TAB) .247 (6.27) 2. ANODE (CASE) .224 (5.89) DIM 003b.ds4 Honeywell reserves the right to make changes in order to improve design and 24 h supply the best products possible.SE3450/5450 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25C Free-Air Temperature unless otherwise noted) Continuous Forward Current 100 mA Power Dissipation 150 mW Operating Temperature Range -55C to 125C Storage Temperature Range -65C to 150C Soldering Temperature (10 sec) 260C Notes 1. Derate linearly from 25C free-air temperature at the rate of 1.43 mW/C. Honeywell reserves the right to make changes in order to improve design and 25 h supply the best products possible.

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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