Product Information

2N7002

2N7002 electronic component of High Diode

Datasheet
MOSFET N Channel 60V 115mA 2.5V @ 250uA 5O @ 500mA,10V SOT-23 RoHS
Manufacturer: High Diode
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0255 ea
Line Total: USD 0.51

7469 - Global Stock
Ships to you between
Thu. 02 May to Tue. 07 May
MOQ: 20  Multiples: 20
Pack Size: 20

 More Buying Options & Price Grid(s)

Availability Price Quantity
756 - Global Stock


Ships to you between
Thu. 02 May to Tue. 07 May

MOQ : 10
Multiples : 10

Stock Image

2N7002
High Diode

10 : USD 0.0265
100 : USD 0.0216
300 : USD 0.0189
3000 : USD 0.0151
6000 : USD 0.0136
9000 : USD 0.013

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The High Diode 2N7002 is a MOSFET N-channel transistor with a breakdown voltage of 60V and a maximum continuous drain current of 115mA. It features a low on-state resistance of 2.5V at 250uA, a fast switching speed of 5O at 500mA, and a gate-source voltage of 10V. The device is packaged in a SOT-23 RoHS-compliant package. This transistor is ideal for power management applications which require high-temperature operations and low on-state resistance.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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