Product Information

GS8642Z72GC-200IV

GS8642Z72GC-200IV electronic component of GSI Technology

Datasheet
SRAM 1.8/2.5V Core Vltg 1.8/2.5V I/O Vltg

Manufacturer: GSI Technology
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 229.7875 ea
Line Total: USD 229.79

27 - Global Stock
Ships to you between
Tue. 07 May to Thu. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
20 - Global Stock


Ships to you between Tue. 07 May to Thu. 09 May

MOQ : 1
Multiples : 1

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GS8642Z72GC-200IV
GSI Technology

1 : USD 175.674
10 : USD 157.297
28 : USD 156.86
56 : USD 152.651
112 : USD 144.601
252 : USD 144.578
504 : USD 140.6105
1008 : USD 140.5645
2506 : USD 140.553

     
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RoHS - XON
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GS8642Z18/36/72(B/C)-xxxV 119- & 209-Bump BGA 250 MHz167 MHz 72Mb Pipelined and Flow Through Commercial Temp 1.8 V or 2.5 V V DD Synchronous NBT SRAM Industrial Temp 1.8 V or 2.5 V I/O Features Because it is a synchronous device, address, data inputs, and NBT (No Bus Turn Around) functionality allows zero wait read/write control inputs are captured on the rising edge of the Read-Write-Read bus utilization; fully pin-compatible with input clock. Burst order control (LBO) must be tied to a power both pipelined and flow through NtRAM, NoBL and rail for proper operation. Asynchronous inputs include the ZBT SRAMs Sleep mode enable (ZZ) and Output Enable. Output Enable can 1.8 V 2.5 V core power supply be used to override the synchronous control of the output 1.8 V or 2.5 V I/O supply drivers and turn the RAM's output drivers off at any time. User-configurable Pipeline and Flow Through mode Write cycles are internally self-timed and initiated by the rising ZQ mode pin for user-selectable high/low output drive edge of the clock input. This feature eliminates complex off- IEEE 1149.1 JTAG-compatible Boundary Scan chip write pulse generation required by asynchronous SRAMs LBO pin for Linear or Interleave Burst mode and simplifies input signal timing. Pin-compatible with 2Mb, 4Mb, 8Mb, and 16Mb devices Byte write operation (9-bit Bytes) The GS8642Z18/36/72(B/C)-xxxV may be configured by the 3 chip enable signals for easy depth expansion user to operate in Pipeline or Flow Through mode. Operating ZZ Pin for automatic power-down as a pipelined synchronous device, in addition to the rising- JEDEC-standard 119- or 209-bump BGA package edge-triggered registers that capture input signals, the device RoHS-compliant 119- and 209-bump BGA packages incorporates a rising edge triggered output register. For read available cycles, pipelined SRAM output data is temporarily stored by the edge-triggered output register during the access cycle and Functional Description then released to the output drivers at the next rising edge of The GS8642Z18/36/72(B/C)-xxxV is a 72Mbit Synchronous clock. Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL The GS8642Z18/36/72(B/C)-xxxV is implemented with GSI's or other pipelined read/double late write or flow through read/ high performance CMOS technology and is available in a single late write SRAMs, allow utilization of all available bus JEDEC-standard 119-bump or 209-bump BGA package. bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. Parameter Synopsis -250 -200 -167 Unit t 3.0 3.0 3.4 ns KQ 4.0 5.0 6.0 ns tCycle Pipeline Curr (x18) 340 290 260 mA 3-1-1-1 Curr (x36) 410 350 305 mA Curr (x72) 520 435 380 mA t 6.5 7.5 8.0 ns KQ 6.5 7.5 8.0 ns tCycle Flow Through Curr (x18) 245 220 210 mA 2-1-1-1 Curr (x36) 280 250 240 mA Curr (x72) 370 315 300 mA Rev: 1.04a 2/2009 1/33 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see GS8642Z18/36/72(B/C)-xxxV GS8642Z72C-xxxV Pad Out209-Bump BGATop View (Package C) 1 2 3 4 5 6 7 8 9 10 11 A DQG DQG A E2 A ADV A E3 A DQB DQB A B DQG DQG BC BG NC W A BB BF DQB DQB B C DQG DQG BH BD NC E1 NC BE BA DQB DQB C D DQG DQG V NC NC G NC NC V DQB DQB D SS SS E DQPG DQPC V V V V V V V DQPF DQPB E DDQ DDQ DD DD DD DDQ DDQ F DQC DQC V V V ZQ V V V DQF DQF F SS SS SS SS SS SS G DQC DQC V V V MCH V V V DQF DQF G DDQ DDQ DD DD DDQ DDQ H DQC DQC V V V MCL V V V DQF DQF H SS SS SS SS SS SS J DQC DQC V V V MCH V V V DQF DQF J DDQ DDQ DD DD DDQ DDQ K NC NC CK NC V CKE V NC NC NC NC K SS SS L DQH DQH V V V FT V V V DQA DQA L DDQ DDQ DD DD DDQ DDQ M DQH DQH V V V MCL V V V DQA DQA M SS SS SS SS SS SS N DQH DQH V V V MCH V V V DQA DQA N DDQ DDQ DD DD DDQ DDQ P DQH DQH V V V ZZ V V V DQA DQA P SS SS SS SS SS SS R DQPD DQPH V V V V V V V DQPA DQPE R DDQ DDQ DD DD DD DDQ DDQ T DQD DQD V NC NC LBO NC NC V DQE DQE T SS SS U DQD DQD NC A A A A A NC DQE DQE U V DQD DQD A A A A1 A A A DQE DQE V W DQD DQD TMS TDI A A0 A TDO TCK DQE DQE W 2 11 x 19 Bump BGA14 x 22 mm Body1 mm Bump Pitch Rev: 1.04a 2/2009 2/33 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

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