Product Information

GD05MPS17H

GD05MPS17H electronic component of GeneSiC Semiconductor

Datasheet
Schottky Diodes & Rectifiers 1700V 5A TO-247-2 SiC Schottky MPS

Manufacturer: GeneSiC Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.5324 ea
Line Total: USD 7.5324

3602 - Global Stock
Ships to you between
Wed. 10 Apr to Fri. 12 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
537 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1

Stock Image

GD05MPS17H
GeneSiC Semiconductor

1 : USD 5.4165
10 : USD 4.899
30 : USD 4.738
120 : USD 4.485
270 : USD 4.278
510 : USD 4.209
1020 : USD 4.209
2520 : USD 4.1055
5010 : USD 3.956

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Hts Code
LoadingGif

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GD05MPS17H TM 1700V 5A SiC Schoktt y MPS Diode Silicon Carbide Schoktt y Diode V = 1700 V RRM IF (T = 164C) = 5 A C Q = 41 nC C Features Package Gen4 Thin Chip Technology for Low V F Case Enhanced Surge and Avalanche Robustness Superior Figure of Merit Q /I C F Low Thermal Resistance RoHS Low Reverse Leakage Current Temperature Independent Fast Switching Positi ve Temperature Coe c ient of V F Low V for High Temperature Opera tion F TO-247-2 REACH K A Advantages Applicaoti ns Improved System E c iency EV Fast Chargers High System Reliability Solar Inverters Op timal Price Performance An ti-Parallel / Free-Wheeling Diode Reduced Cooling Requirements Motor Drives Increased System Power Density High Frequency Rec ti ers Zero Reverse Recovery Current Switched Mode Power Supply (SMPS) Easy to Parallel without Thermal Runaway Induction Heating and Welding Improved System E c iency Medical Imaging Absolute Maximum Rangti s (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 1700 V RRM TC = 100C, D = 1 15 Continuous Forward Current IF TC = 135C, D = 1 10 A Fig. 4 T = 164C, D = 1 5 C T = 25C, t = 10 ms 50 Non-Repetitive Peak Forward Surge Current, Half Sine C P IF,SM A Wave T = 150C, t = 10 ms 40 C P TC = 25C, tP = 10 ms 30 Repetitive Peak Forward Surge Current, Half Sine Wave I A F,RM TC = 150C, tP = 10 ms 21 Non-Repetitive Peak Forward Surge Current I T = 25C, t = 10 s 250 A F,MAX C P 2 2 2 i t Value i dt T = 25C, t = 10 ms 12 A s C P Non-Repetitive Avalanche Energy EAS L = 8 mH, IAS = 5 A 100 mJ Diode Ruggedness dV/dt V = 0 ~ 1360 V 200 V/ns R Power Dissipation P T = 25C 141 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C Rev 21/Jun Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD05MPS17H/GD05MPS17H.pdf Page 1 of 7GD05MPS17H TM 1700V 5A SiC Schoktt y MPS Diode Electrical Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 5 A, T = 25C 1.5 1.8 F j Diode Forward Voltage V V Fig. 1 F I = 5 A, T = 175C 2.1 F j V = 1700 V, T = 25C 1 20 R j Reverse Current I A Fig. 2 R V = 1700 V, T = 175C 4 R j VR = 600 V 28 Total Capacitive Charge Q nC Fig. 7 C VR = 1200 V 41 IF IF,MAX dI /dt = 200 A/s F V = 600 V R Switching Time tS < 10 ns V = 1200 V R VR = 1 V, f = 1MHz 361 Total Capacitance C pF Fig. 6 VR = 1200 V, f = 1MHz 20 Thermal/Package Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case RthJC 1.06 C/W Fig. 9 Weight W 6.0 g T Mounting Torque T Screws to Heatsink 1.1 Nm M Rev 21/Jun Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD05MPS17H/GD05MPS17H.pdf Page 2 of 7

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
GENESIC SEMI
GENESIC SEMICONDUCTOR INC.

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