Product Information

GBU6D

GBU6D electronic component of GeneSiC Semiconductor

Datasheet
Bridge Rectifiers 200V 6A Bridge Rectifier

Manufacturer: GeneSiC Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.2869 ea
Line Total: USD 2.29

2730 - Global Stock
Ships to you between
Wed. 08 May to Fri. 10 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2528 - Global Stock


Ships to you between Wed. 08 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

GBU6D
GeneSiC Semiconductor

1 : USD 1.6445
10 : USD 1.1465
25 : USD 1.0028
100 : USD 0.8165
250 : USD 0.728
500 : USD 0.6636
1000 : USD 0.6015
2500 : USD 0.575
5000 : USD 0.5152

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Termination Style
If - Forward Current
Peak Reverse Voltage
Vf - Forward Voltage
Max Surge Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Ir - Reverse Current
Brand
Maximum Reverse Leakage Current
Maximum Rms Reverse Voltage
Factory Pack Quantity :
Product
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
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GBU6A thru GBU6G V = 50 V - 400 V RRM Single Phase Glass Passivated I = 6 A O Silicon Bridge Rectifier Features Epoxy Resin material compliant with 94V-0 standards of UL UL Material Flammability Provisions Compliant with UL Provisions, UL Code: E303851 GBU Package Ideal for printed circuit boards High surge overload rating High temperature soldering guaranteed: 260C/ 10 seconds, 9.5 mm lead length Not ESD Sensitive Mechanical Data Case: Epoxy resin body over passivated junctions Weight: 4.60 g Mounting position: Any Maximum ratings at T = 25 C, unless otherwise specified A Parameter Symbol Conditions GBU6A GBU6B GBU6D GBU6G Unit Repetitive peak reverse voltage V 50 100 200 400 V RRM V 140 280 RMS reverse voltage 35 70 V RMS V DC blocking voltage 50 100 200 400 V DC Operating temperature T -40 to 150 -40 to 150 -40 to 150 -40 to 150 C j Storage temperature T -40 to 150 -40 to 150 -40 to 150 -40 to 150 C stg Electrical characteristics at T = 25 C, unless otherwise specified A Single phase, half sine wave, 50 Hz, resistive load For capacitive load derate current by 20% Conditions GBU6D GBU6G Parameter Symbol GBU6A GBU6B Unit (1) (1) (1) (1) T = 100 C C 6 6 6 6 I Maximum forward rectified current A O (2) (2) (2) (2) T = 25 C A 2.8 2.8 2.8 2.8 t = 10 ms, T = 25 C Peak forward surge current I 175 175 175 175 A FSM p j Maximum forward voltage drop V I = 3 A 1.05 1.05 1.05 1.05 V F F T = 25 C 5 5 5 5 Maximum reverse current at rated DC A I A R blocking voltage T = 125 C 500 500 500 500 A AC voltage: 1 min V Insulation strength (lead wire to case) 2.5 2.5 2.5 2.5 kV dis leakage current<1mA 2 2 Rating for fusing at T = 25 C 1ms < t < 10 ms 55 55 55 55 j I t p A s (2) (2) (2) (2) R 22 22 22 22 JA Typical thermal resistance C/W (1) (1) (1) (1) 5.5 5.5 R 5.5 5.5 JC Mounting Torque M 0.8 (0.5 N.m is recommended) N.m 1 - Device mounted on 65 mm x 35 mm x 1.5 mm heatsink 2 - Device mounted on PCB without heatsink 3 - Recommended mounted position is to bolt down device on a heatsink with silicon thermal compond for maximum heat transfer using M3 screw. 1 Oct. 2018 GBU6A thru GBU6G 2 Oct. 2018

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
GENESIC SEMI
GENESIC SEMICONDUCTOR INC.

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