Product Information

S9015G

Name: S9015G
Brand: Galaxy
SKU: S9015G_Galaxy
Availability: OutOfStock
Rating: 5 (11 reviews)

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Datasheet

Transistors (NPN/PNP) PNP 100mA 45V SOT-23 RoHS

Manufacturer: Galaxy

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.0151 ea
Line Total: USD 0.76

0 - Global Stock

MOQ: 50 Multiples: 50
Pack Size: 50

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - Global Stock Ships to you between Fri. 03 May to Wed. 08 May MOQ : 50 Multiples : 50 S9015G Galaxy	50 : USD 0.0146 500 : USD 0.0114 3000 : USD 0.0096 6000 : USD 0.0085 24000 : USD 0.0076 51000 : USD 0.0071

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Additional Infomation About Product

S9015G with Transistors is a PNP type transistor manufactured by Galaxy. It has a power dissipation of 100mA with a maximum voltage rating of 45V, making it suitable for a wide range of applications. This device is packaged in a SOT-23 form factor, allowing it to be easily mounted for electrical connections to other components. It is RoHS compliant, indicating it meets the environmental regulations outlined in the Restriction of Hazardous Substances Directive.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Galaxy may also be referenced as

Galaxy

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Manufacturer Galaxy Galaxy
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Category Bipolar Transistors-BJT Bipolar Transistors-BJT
Rohs y y
Package SOT - 23 SOT - 23
Brand Category Galaxy Galaxy
Transistor Type pnp pnp
Current - Collector Ic Max 100 mA 100 mA
Voltage - Collector Emitter Breakdown Max 45 V 45 V
Power - Max 200 mW 200 mW
Collector Cut-Off Current Icbo 100 nA 100 nA
Collector-Emitter Breakdown Voltage Vceo 45 V 45 V
Power Dissipation Pd 200 mW 200 mW
Collector Current Ic 100 mA 100 mA
Dc Current Gain Hfe@Ic Vce - -
Transition Frequency Ft 100MHz 100MHz
Collector-Emitter Saturation Voltage Vcesat@Ic Ib 300 mV @100 mA , 10 mA 300 mV @100 mA , 10 mA
Operating Temperature - 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)