Product Information

SS8050

SS8050 electronic component of FUXINSEMI

Datasheet
Transistors (NPN/PNP) SOT-23 RoHS

Manufacturer: FUXINSEMI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 0.017 ea
Line Total: USD 0.85

33707 - Global Stock
Ships to you between
Thu. 11 Apr to Tue. 16 Apr
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
36957 - Global Stock


Ships to you between
Thu. 11 Apr to Tue. 16 Apr

MOQ : 50
Multiples : 50

Stock Image

SS8050
FUXINSEMI

50 : USD 0.0168
500 : USD 0.0135
3000 : USD 0.011
6000 : USD 0.0098
24000 : USD 0.0089
51000 : USD 0.0085

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Collector Cut-Off Current Icbo
Collector-Emitter Breakdown Voltage Vceo
Power Dissipation Pd
Collector Current Ic
Dc Current Gain Hfe@Ic Vce
Transition Frequency Ft
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
Transistor Type
Operating Temperature
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
F3C10065A electronic component of FUXINSEMI F3C10065A

Schottky Barrier Diodes (SBD) TO-220-2 RoHS
Stock : 16

MBR10100CT electronic component of FUXINSEMI MBR10100CT

Schottky Barrier Diodes (SBD) TO-220AB RoHS
Stock : 27

MBR10100FCT electronic component of FUXINSEMI MBR10100FCT

Schottky Barrier Diodes (SBD) ITO-220AB RoHS
Stock : 50

MBR10200FCT electronic component of FUXINSEMI MBR10200FCT

Schottky Barrier Diodes (SBD) ITO-220AB RoHS
Stock : 0

MBR30100FCT electronic component of FUXINSEMI MBR30100FCT

Schottky Barrier Diodes (SBD) ITO-220AB RoHS
Stock : 7

MBR30200FCT electronic component of FUXINSEMI MBR30200FCT

Schottky Barrier Diodes (SBD) ITO-220AB RoHS
Stock : 0

MBR20200FCT electronic component of FUXINSEMI MBR20200FCT

Schottky Barrier Diodes (SBD) ITO-220AB RoHS
Stock : 25

MBR3060CT electronic component of FUXINSEMI MBR3060CT

Schottky Barrier Diodes (SBD) TO-220AB RoHS
Stock : 0

BTB16-600BW electronic component of FUXINSEMI BTB16-600BW

Thyristors - TRIACs TO-220B RoHS
Stock : 935

F3C10170D electronic component of FUXINSEMI F3C10170D

20μA@1.7kV 1.7kV Single 1.7V@10A 14.4A TO-247-2 Schottky Barrier Diodes (SBD) ROHS
Stock : 55

Image Description
KSP05TA electronic component of ON Semiconductor KSP05TA

Bipolar (BJT) Transistor NPN 60 V 500 mA 100MHz 625 mW Through Hole TO-92-3
Stock : 1

MMBT4126LT1G electronic component of ON Semiconductor MMBT4126LT1G

Bipolar (BJT) Transistor PNP 25 V 200 mA 250MHz 225 mW Surface Mount SOT-23-3 (TO-236)
Stock : 60428

MMBT200 electronic component of ON Semiconductor MMBT200

Bipolar Transistors - BJT PNP Transistor General Purpose
Stock : 1

BC807DS,115 electronic component of Nexperia BC807DS,115

Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
Stock : 12001

BCP52 electronic component of ON Semiconductor BCP52

Bipolar (BJT) Transistor PNP 60 V 1.2 A 1.5 W Surface Mount SOT-223-4
Stock : 1

BC848CDW1T1G electronic component of ON Semiconductor BC848CDW1T1G

Transistors Bipolar - BJT 100mA 30V Dual NPN
Stock : 1

KSC2330YTA electronic component of ON Semiconductor KSC2330YTA

Bipolar (BJT) Transistor NPN 300 V 100 mA 50MHz 1 W Through Hole TO-92-3
Stock : 0

2SC3326-A,LF electronic component of Toshiba 2SC3326-A,LF

Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Stock : 1

2SC4117-BL,LF electronic component of Toshiba 2SC4117-BL,LF

Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Stock : 1

2N4401 electronic component of ON Semiconductor 2N4401

Trans GP BJT NPN 40V 0.6A 3-Pin TO-92 Bulk
Stock : 0

SS8050 is a Transistors (NPN/PNP) SOT-23 RoHS manufactured by FUXINSEMI. It is typically used as a switching and amplification device in electronic systems. It has three terminals, namely emitter, collector and base. It is a low power, low voltage, NPN bipolar junction (BJT) transistor designed for switching and general purpose amplification. The package is SOT-23 and is RoHS compliant. It has a wide range of operating voltages and currents that makes it suitable for use in a variety of applications. The device is capable of providing gain values close to 100 which makes it an excellent choice for electronic circuits that require amplification of low level signals. This device has good thermal stability which makes it suitable for temperature-sensitive applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted