Product Information

MB85RC64VPNF-G-JNERE1

MB85RC64VPNF-G-JNERE1 electronic component of Fujitsu Semiconductor

Datasheet
F-RAM 64kbit FRAM, I2C, 3.0V 5.5V - SOP8 T&R

Manufacturer: Fujitsu Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.19 ea
Line Total: USD 4.19

8573 - Global Stock
Ships to you between
Wed. 01 May to Fri. 03 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6455 - Global Stock


Ships to you between Wed. 01 May to Fri. 03 May

MOQ : 1
Multiples : 1

Stock Image

MB85RC64VPNF-G-JNERE1
Fujitsu Semiconductor

1 : USD 2.4265
10 : USD 2.208
100 : USD 1.978
500 : USD 1.9205
1000 : USD 1.794
1500 : USD 1.7595
3000 : USD 1.6445
9000 : USD 1.6445
24000 : USD 1.6445

     
Manufacturer
Product Category
Hts Code
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
MB85RC16VPNF-G-JNN1ERE1 electronic component of Fujitsu Semiconductor MB85RC16VPNF-G-JNN1ERE1

F-RAM 16kbit FRAM, I2C, 3.0V 5.5V - SOP8 T&R
Stock : 6839

MB85RS2MTYPNF-G-AWERE2 electronic component of Fujitsu Semiconductor MB85RS2MTYPNF-G-AWERE2

F-RAM 2Mbit FRAM, SPI, 1.8 3.6V - SOP8 T&R (125?)
Stock : 3494

MB85RS2MLYPNF-GS-AWE2 electronic component of Fujitsu Semiconductor MB85RS2MLYPNF-GS-AWE2

F-RAM 2Mbit FRAM, SPI, 1.7 1.95V - SOP8 tube (AEC-Q100 125?)
Stock : 865

MB85RC16PN-G-AMERE1 electronic component of Fujitsu Semiconductor MB85RC16PN-G-AMERE1

F-RAM 16kbit FRAM, I2C, 2.7V 3.6V - SON8 T&R
Stock : 1767

MB85RS64TPNF-G-JNERE2 electronic component of Fujitsu Semiconductor MB85RS64TPNF-G-JNERE2

F-RAM 64kbit FRAM, SPI, 1.8V 3.6V, 10MHz- SOP8 T&R
Stock : 0

MB85RS128TYPNF-GS-BCERE1 electronic component of Fujitsu Semiconductor MB85RS128TYPNF-GS-BCERE1

F-RAM 128kbit FRAM SPI, 1.8 3.6V, 125C AECQ100 - SOP8 T&R
Stock : 4126

MB85R1001ANC-GE1 electronic component of Fujitsu Semiconductor MB85R1001ANC-GE1

F-RAM 1Mbit FRAM, 128kbit x8 parallel, 3.0V 3.6V - TSOP48 Tray
Stock : 2440

MB85RS64VYPN-G-AMEWE1 electronic component of Fujitsu Semiconductor MB85RS64VYPN-G-AMEWE1

F-RAM 64kbit FRAM, SPI, 2.7V 5.5V, 125? - SON8 T&R
Stock : 3714

MB85RS2MTYPNF-GS-AWERE2 electronic component of Fujitsu Semiconductor MB85RS2MTYPNF-GS-AWERE2

F-RAM 2Mbit FRAM, SPI, 1.8 3.6V - SOP8 T&R (AEC-Q100 125?)
Stock : 1849

MB85RC16PNF-G-JNERE1 electronic component of Fujitsu Semiconductor MB85RC16PNF-G-JNERE1

F-RAM 16kbit FRAM, I2C, 2.7V 3.6V - SOP8 T&R
Stock : 8066

Image Description
FM25V02A-DG electronic component of Infineon FM25V02A-DG

F-RAM NVRAM FRAM Memory Serial
Stock : 664

FM25W256-GTR electronic component of Infineon FM25W256-GTR

F-RAM SPI FRAM 256k 3-5V
Stock : 3261

MR45V032AMAZBATL electronic component of ROHM MR45V032AMAZBATL

FERAM, 32KBIT, SPI, 8SOP
Stock : 1183

FM25V20A-DG electronic component of Infineon FM25V20A-DG

F-RAM 2Mb, 40Mhz, 256K x 8 SPI FRAM
Stock : 19

FM24V01-G electronic component of Infineon FM24V01-G

NVRAM FRAM Serial-2Wire 128Kbit 3.3V Automotive 8-Pin SOIC
Stock : 15

FM25V20A-G electronic component of Infineon FM25V20A-G

F-RAM 2Mb, 40Mhz, 256K x 8 SPI FRAM
Stock : 3

CY15V108QN-20LPXC electronic component of Infineon CY15V108QN-20LPXC

F-RAM Excelon LP 20 MHz 8-GQFN
Stock : 0

CY15E004Q-SXET electronic component of Infineon CY15E004Q-SXET

F-RAM F-RAM Memory Serial
Stock : 10

FM25CL64B-DG electronic component of Infineon FM25CL64B-DG

IC: FRAM memory; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8; serial
Stock : 1

FM25L16B-G electronic component of Infineon FM25L16B-G

IC: FRAM memory; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; SO8; serial
Stock : 167

FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-7v0-E Memory FRAM 2 64 K (8 K 8) Bit I C MB85RC64V DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64V is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64V has improved to be at 12 least 10 cycles, significantly outperforming other nonvolatile memory products in the number. The MB85RC64V does not need a polling sequence after writing to the memory such as the case of Flash 2 memory or E PROM. FEATURES Bit configuration : 8,192 words 8 bits Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA). Operating frequency : 1 MHz (Max) 12 Read/write endurance : 10 times / byte Data retention : 10 years ( + 85 C), 95 years ( + 55 C), over 200 years ( + 35 C) Operating power supply voltage : 3.0 V to 5.5 V Low-power consumption : Operating power supply current 90 A (Typ 1 MHz) Standby current 5 A (Typ) Operation ambient temperature range : 40 C to + 85 C Package : 8-pin plastic SOP (FPT-8P-M02) RoHS compliant Copyright 2011-2015 FUJITSU SEMICONDUCTOR LIMITED 2015.5MB85RC64V PIN ASSIGNMENT (TOP VIEW) A0 1 8 VDD 2 7 A1 WP A2 3 6 SCL VSS 4 5 SDA (FPT-8P-M02) PIN FUNCTIONAL DESCRIPTIONS Pin Pin Name Functional Description Number Device Address pins The MB85RC64V can be connected to the same data bus up to 8 devices. Device addresses are used in order to identify each of these devices. Connect 1 to 3 A0 to A2 these pins to VDD pin or VSS pin externally. Only if the combination of VDD and VSS pins matches a Device Address Code inputted from the SDA pin, the device operates. In the open pin state, A0, A1 and A2 pins are internally pulled- down and recognized as the level. 4 VSS Ground pin Serial Data I/O pin This is an I/O pin which performs bidirectional communication for both memory 5SDA address and writing/reading data. It is possible to connect multiple devices. It is an open drain output, so a pull-up resistor is required to be connected to the ex- ternal circuit. Serial Clock pin 6SCL This is a clock input pin for input/output serial data. Data is sampled on the ris- ing edge of the clock and output on the falling edge. Write Protect pin When the Write Protect pin is the H level, the writing operation is disabled. When the Write Protect pin is the L level, the entire memory region can be 7WP overwritten. The reading operation is always enabled regardless of the Write Protect pin input level. The Write Protect pin is internally pulled down to VSS pin, and that is recognized as the L level (write enabled) when the pin is the open state. 8 VDD Supply Voltage pin 2 DS501-00013-7v0-E

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted