Product Information

MB85RC16VPNF-G-JNN1ERE1

MB85RC16VPNF-G-JNN1ERE1 electronic component of Fujitsu Semiconductor

Datasheet
F-RAM 16kbit FRAM, I2C, 3.0V 5.5V - SOP8 T&R

Manufacturer: Fujitsu Semiconductor
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Price (USD)

1: USD 2.3349 ea
Line Total: USD 2.3349

6633 - Global Stock
Ships to you between
Thu. 11 Apr to Mon. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3510 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1

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MB85RC16VPNF-G-JNN1ERE1
Fujitsu Semiconductor

1 : USD 1.564
10 : USD 1.4375
100 : USD 1.2765
500 : USD 1.2535
1000 : USD 1.2075
1500 : USD 1.1362
3000 : USD 1.1339
9000 : USD 1.1121
24000 : USD 1.0568

     
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FUJITSU SEMICONDUCTOR DS501-00010-9v0-E DATA SHEET Memory FRAM 2 16 K (2 K 8) Bit I C MB85RC16V DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data without using a data backup battery. 12 The memory cells used in the MB85RC16V have at least 10 Read/Write operation endurance per byte, which is a significant improvement over the number of read/write operations than by other nonvolatile memory products. The MB85RC16V can provide writing in one byte units because the long writing time is not required unlike 2 Flash memory and E PROM. Therefore, the writing completion waiting sequence like a write busy state is not required. FEATURES Bit configuration : 2,048 words 8 bits Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA). Operating frequency : 1 MHz (Max) 12 Read/Write endurance : 10 times / byte Data retention : 10 years ( 85 C), 95 years ( 55 C), over 200 years ( 35 C) Operating power supply voltage : 3.0 V to 5.5 V Low power consumption : Operating power supply current 90 A (Typ 1 MHz) Standby current 5 A (Typ) Operation ambient temperature range: 40 C to 85 C Package : 8-pin plastic SOP (FPT-8P-M02) RoHS compliant Copyright 2018 FUJITSU SEMICONDUCTOR LIMITED 2018.12MB85RC16V PIN ASSIGNMENT (TOP VIEW) NC 1 8 VDD 2 7 NC WP NC 3 6 SCL VSS 4 5 SDA (FPT-8P-M02) PIN FUNCTIONAL DESCRIPTIONS Pin Pin Name Functional Description Number No Connect pins 1 to 3 NC Leave these pins open, or connect to VDD or VSS. 4 VSS Ground pin Serial Data I/O pin This is an I/O pin which performs bidirectional communication for both memory 5SDA address and writing/reading data. It is possible to connect multiple devices. It is an open drain output, so a pull-up resistor is required to be connected to the external circuit. Serial Clock pin 6SCL This is a clock input pin for input/output serial data. Data is sampled on the rising edge of the clock and output on the falling edge. Write Protect pin When the Write Protect pin is the H level, writing operation is disabled. When the Write Protect pin is the L level, the entire memory region can be overwritten. 7WP Reading operation is always enabled regardless of the Write Protect pin input level. The Write Protect pin is internally pulled down to the VSS pin and, that is recognized as the L level (write enabled) when the pin is the open state. 8 VDD Supply Voltage pin 2 DS501-00010-9v0-E

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

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