Product Information

FIR4N65FG

FIR4N65FG electronic component of First Semicon

MOSFET N Trench 650V 4A (Tc) 4V @ 250uA 2.8 Ω @ 2A,10V TO-220F (TO-220IS) RoHS

Manufacturer: First Semicon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4208 ea
Line Total: USD 0.4208

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between
Thu. 11 Apr to Tue. 16 Apr

MOQ : 1
Multiples : 1

Stock Image

FIR4N65FG
First Semicon

1 : USD 0.4208
10 : USD 0.3445
30 : USD 0.3119
100 : USD 0.271
500 : USD 0.2528
1000 : USD 0.2419

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The FIR4N65FG is a MOSFET N Trench 650V 4A (Tc) 4V @ 250uA 2.8 Ω @ 2A,10V TO-220F (TO-220IS) RoHS transistor, manufactured by First Semicon. This transistor is designed for power management and high voltage applications. It offers superior switching and thermal performance. Its low on resistance and tight parameter distribution makes it ideal for a wide range of applications needing higher level devices. With its low capacitance and fast switching speed, it is sure to give you an edge in performance and efficiency for your power design.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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