Product Information

FIR4N60LG

Name: FIR4N60LG
Brand: First Semicon
SKU: FIR4N60LG_FirstSemicon
Availability: OutOfStock
Rating: 5 (11 reviews)

FIR4N60LG electronic component of First Semicon

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See Product Specifications

MOSFET N Trench 600V 4A (Tc) 4V @ 250uA 2.4 Î© @ 2A,10V TO-252-2 (DPAK) RoHS

Manufacturer: First Semicon

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.3594 ea
Line Total: USD 0.36

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - Global Stock Ships to you between Thu. 02 May to Tue. 07 May MOQ : 1 Multiples : 1 FIR4N60LG First Semicon	1 : USD 0.3594 10 : USD 0.3108 30 : USD 0.2754 100 : USD 0.2464 500 : USD 0.2414 1000 : USD 0.239

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Additional Infomation About Product

The FIR4N60LG is a MOSFET N-Trench type manufactured by First Semicon. It is designed for applications requiring high voltage and low power handling. It has a maximum voltage rating of 600V and a current rating of 4A (Tc). It has a gate threshold voltage of 4V @ 250uA and offers a low on-resistance of 2.4 O @ 2A and 10V. The package of this component is TO-252-2 (DPAK) and it is RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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First Semicon

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Manufacturer First Semicon First Semicon
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package TO - 252 - 2 (DPAK) TO - 252 - 2 (DPAK)
Brand Category First Semicon First Semicon
Fet Type n trench n trench
Drain To Source Voltagevdss 600 V 600 V
Continuous Drain Current Id @ 25°C 4 A (t C) 4 A (t C)
Vgsth Max @ Id 4v @ 250ua 4v @ 250ua
Rds On Max @ Id Vgs 2.4 @ 2a,10v 2.4 @ 2a,10v
Power Dissipation-Max Ta 77 W 77 W
Drain Source Voltage Vdss 600 V 600 V
Continuous Drain Current Id 4 A 4 A
Drain Source On Resistance Rdson@Vgs Id 2.4 Ohms @10V , 2A 2.4 Ohms @10V , 2A
Power Dissipation Pd 77 W 77 W
Gate Threshold Voltage Vgsth@Id 4 V @250uA 4 V @250uA
Type N Channel N Channel