Product Information

FIR10N65FG

Name: FIR10N65FG
Brand: First Semicon
SKU: FIR10N65FG_FirstSemicon
Availability: OutOfStock
Rating: 5 (11 reviews)

FIR10N65FG electronic component of First Semicon

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See Product Specifications

MOSFET N Trench 650V 10A (Tc) 4V @ 250uA 1 Î© @ 5A,10V TO-220F (TO-220IS) RoHS

Manufacturer: First Semicon

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.7548 ea
Line Total: USD 0.75

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - Global Stock Ships to you between Fri. 03 May to Wed. 08 May MOQ : 1 Multiples : 1 FIR10N65FG First Semicon	1 : USD 0.7548 10 : USD 0.6233 30 : USD 0.5284 100 : USD 0.4505 500 : USD 0.4382 1000 : USD 0.4309

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Additional Infomation About Product

The FIR10N65FG is a N-Channel Trench MOSFET with a 650V drain-source voltage rating (VDSS), 10A drain current rating (ID), 1O maximum RDS(on), and 4V maximum threshold voltage rating (VGS). It is packaged in a TO-220F plastic medium power package with five pins, which is compliant with the RoHS directive. The transistor has an operating temperature range of -55°C to +150°C and is manufactured by First Semicon. The TO-220IS package is the bottomless variant of the TO-220F and provides improved thermal characteristics with a lower thermal resistance.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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First Semicon

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Manufacturer First Semicon First Semicon
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package TO - 220F (TO - 220IS) TO - 220F (TO - 220IS)
Brand Category First Semicon First Semicon
Fet Type n trench n trench
Drain To Source Voltagevdss 650 V 650 V
Continuous Drain Current Id @ 25°C 10 A (t C) 10 A (t C)
Vgsth Max @ Id 4v @ 250ua 4v @ 250ua
Rds On Max @ Id Vgs 1 @ 5a,10v 1 @ 5a,10v
Power Dissipation-Max Ta 50 W 50 W
Drain Source Voltage Vdss 650 V 650 V
Continuous Drain Current Id 10 A 10 A
Power Dissipation Pd 50 W 50 W
Drain Source On Resistance Rdson@Vgs Id 1 Ohms @10V , 5A 1 Ohms @10V , 5A
Gate Threshold Voltage Vgsth@Id 4 V @250uA 4 V @250uA
Type N Channel N Channel