Product Information

FHT9014Y-ME

Name: FHT9014Y-ME
Brand: Fenghua Advanced
SKU: FHT9014YME_FenghuaAdvanced
Availability: OutOfStock
Rating: 5 (11 reviews)

FHT9014Y-ME electronic component of Fenghua Advanced

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Datasheet

Transistors (NPN/PNP) SOT-23 (SOT-23-3) RoHS

Manufacturer: Fenghua Advanced

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.0224 ea
Line Total: USD 1.12

0 - Global Stock

MOQ: 50 Multiples: 50
Pack Size: 50

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - Global Stock Ships to you between Wed. 08 May to Mon. 13 May MOQ : 50 Multiples : 50 FHT9014Y-ME Fenghua Advanced	50 : USD 0.024 500 : USD 0.0197 3000 : USD 0.0171 6000 : USD 0.0157 24000 : USD 0.0144 51000 : USD 0.0138

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Additional Infomation About Product

The FHT9014Y-ME is a surface mount, RoHS-compliant NPN/PNP transistor manufactured by Fenghua Advanced. It comes in the SOT-23-3 package, which consists of a three-pin transistor in a small surface-mount package about 2.9mm long by 1.3mm wide. The FHT9014Y-ME is used in many applications, including voltage regulation, motor control, signal amplification, and switching circuits. It has a maximum current gain of 400 and a maximum collector-emitter voltage of 40V. This transistor is suitable for use in both commercial and consumer electronic applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Fenghua Advanced may also be referenced as

FH (Guangdong Fenghua Advanced Tech)
FH(Guangdong Fenghua Advanced Tech)
Guangdong Fenghua Advanced Tech

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Manufacturer Fenghua Advanced Fenghua Advanced
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Category Bipolar Transistors-BJT Bipolar Transistors-BJT
Rohs y y
Package SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)
Brand Category Fenghua Advanced Fenghua Advanced
Transistor Type npn npn
Current - Collector Ic Max 150 mA 150 mA
Voltage - Collector Emitter Breakdown Max 45 V 45 V
Power - Max 300 mW 300 mW
Collector Cut-Off Current Icbo 100 nA 100 nA
Collector-Emitter Breakdown Voltage Vceo 45 V 45 V
Power Dissipation Pd 300 mW 300 mW
Collector Current Ic 150 mA 150 mA
Dc Current Gain Hfe@Ic Vce 70@2 mA , 6V 70@2 mA , 6V
Transition Frequency Ft 180MHz 180MHz
Collector-Emitter Saturation Voltage Vcesat@Ic Ib 600 mV @100 mA , 5 mA 600 mV @100 mA , 5 mA
Operating Temperature + 150 C @ (Tj) + 150 C @ (Tj)