VTB Process Photodiode VTB8440BH, 8441BH
PACKAGE DIMENSIONS inch (mm)
CASE 21F 8 mm CERAMIC
2 2
CHIP ACTIVE AREA: .008 in (5.16 mm )
PRODUCT DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Planar silicon photodiode in recessed ceramic
Storage Temperature: -20C to 75C
package. The package incorporates an infrared
Operating Temperature: -20C to 75C
rejection filter. These diodes have very high
shunt resistance and have good blue response.
ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTB curves, pages 21-22)
VTB8440BH VTB8441BH
SYMBOL CHARACTERISTIC TEST CONDITIONS UNITS
Min. Typ. Max. Min. Typ. Max.
I Short Circuit Current H = 100 fc, 2850 K 4 5 4 5 A
SC
I Temperature Coefficient 2850 K .02 .08 .02 .08 %/C
TC I
SC SC
V Open Circuit Voltage H = 100 fc, 2850 K 420 420 mV
OC
TC V V Temperature Coefficient 2850 K -2.0 -2.0 mV/C
OC OC
Dark Current H = 0, VR = 2.0 V 2000 100 pA
I
D
R Shunt Resistance H = 0, V = 10 mV .07 1.4 G
SH
TC R R Temperature Coefficient H = 0, V = 10 mV -8.0 -8.0 %/C
SH SH
Junction Capacitance H = 0, V = 0 1.0 1.0 nF
C
J
Spectral Application Range 330 720 330 720 nm
range
Spectral Response - Peak 580 580 nm
p
Breakdown Voltage 2 40 2 40 V
V
BR
Angular Resp. - 50% Resp. Pt. 50 50 Degrees
1/2
-13 -14
NEP Noise Equivalent Power 1.1 x 10 (Typ.) 2.4 x 10 (Typ.) WH z
12 12
(Typ.) 9.7 x 10 (Typ.) cm Hz W
D* Specific Detectivity 2.2 x 10
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto
42X-ON Electronics
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