Product Information

VTB1013H

VTB1013H electronic component of Excelitas

Datasheet
Photodiode; 920nm; 320-1100nm; Mounting: THT; 8nA

Manufacturer: Excelitas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 10.6202 ea
Line Total: USD 10.62

67 - Global Stock
Ships to you between
Fri. 26 Apr to Thu. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
15 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 1
Multiples : 1

Stock Image

VTB1013H
Excelitas

1 : USD 10.335
3 : USD 9.698

     
Manufacturer
Product Category
Dark Current
Mounting
Type Of Photodetector
Active Area
Wavelength Of Peak Sensitivity
Wavelength
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photodiode S & -t r an SiSt or S for high-volu Me a pplication S Silicon Photodiodes VTB Series Ultra High Dark Resistance BLuE-En HAn c ED SILIc On PHOTODIODES FOR In DuSTRIAL An D cOMMER c IAL APPLIc ATIOn S Silicon Photodiodes VTB Series ultra High Dark Resistance a pplications Ambient light sensing UV and blue light sensing Flame monitoring Light meters Photometry features and Benefits product description UV to IR spectral range This series of P on N silicon planar photodiodes have been designed for optimum response through the visible part of the spectrum. Units with UV transmitting windows also exhibit excellent response Integral IR rejection filters available in the UV. B series units have a built-in infrared rejection filter for applications requiring a response Response 365 nm, 0.14 A/W typical approximating the human eye. Photodiodes made with the VTB process are primarily intended to be Response 220 nm, 0.06 A/W typical used in photovoltaic mode but may be used with a small reverse bias. All photodiodes in this series with UV window exhibit very high shunt resistance. This characteristic leads to very low offsets when used in high gain 1 to 2 % linearity over 7 to 9 decades transimpedance op-amps circuits. Very low dark current High shunt resistance RoHs compliant VtB1012 VtB6061 Small area planar Large area planar silicon photodiode silicon photodiode in flat window in a flat window TO-46 package TO-8 package VtB4051 VtB8341 Planar silicon photo- Planar silicon photo- diode mounted on diode mounted on a ceramic substrate a ceramic substrate and coated with a and coated with a layer of clear epoxy layer of clear epoxy www.excelitas.com 30Product Table Silicon Photodiodes Vt B Series Ultra High Dark Resistance Radiometric Active Short c ircuit c urrent Dark Junction Sensitivity Spectral Peak n oise Equivalent Package Area 100 fc, 2850 K c urrent c apacitance 365 nm Range Wavelength Power min max typ typ typ Symbol I c S NEP Sc J R RAn GE P 2 u nit mm A nA nF A/W nm nm W / Hz -14 Vt B100AH Flat sidelooker 7.1 50 0.50 0.10 0.55 925 nm 400 -1150 925 9.0 x 10 -14 Vt B1012H TO-46 1.6 8.0 0.10 0.31 0.09 320 -1100 920 3.0 x 10 -14 Vt B1012BH TO-46 1.6 0.80 0.10 0.31 0.28 540 nm 330 - 720 580 5.3 x 10 -15 Vt B1013H TO-46 1.6 8.0 0.02 0.31 0.09 320 -1100 920 5.9 x 10 -14 Vt B1013BH TO-46 1.6 0.80 0.02 0.31 0.28 540 nm 330 - 720 580 1.1 x 10 -14 Vt B1112H TO-46 lensed 1.6 30.0 0.10 0.31 0.19 320 -1100 920 3.0 x 10 -14 Vt B1112BH TO-46 lensed 1.6 3.0 0.10 0.31 0.28 540 nm 330 - 720 580 5.3 x 10 -15 Vt B1113H TO-46 lensed 1.6 30.0 0.02 0.31 0.19 320 -1100 920 5.9 x 10 -14 Vt B1113BH TO-46 lensed 1.6 3.0 0.02 0.31 0.28 540 nm 330 - 720 580 1.1 x 10 -14 Vt B4051H Ceramic 14.8 100 0.25 3.0 0.10 320 -1100 920 2.1 x 10 -14 Vt B5051H TO-5 14.8 85 0.25 3.0 0.10 320 -1100 920 2.1 x 10 -14 Vt B5051BH TO-5 14.8 8 0.25 3.0 0.28 540 nm 330 - 720 580 3.7 x 10 -14 Vt B5051JH TO-5 with 3 pins 14.8 85 0.25 3.0 0.10 320 -1100 920 2.1 x 10 -14 Vt B5051UVH TO-5 14.8 85 0.25 3.0 0.038 220 nm 200 -1100 920 2.1 x 10 -14 Vt B5051UVJH TO-5 with 3 pins 14.8 85 0.25 3.0 0.038 220 nm 200 -1100 920 2.1 x 10 -14 Vt B6061H TO-5 37.7 260 2.0 8.0 0.10 320 -1100 920 5.7 x 10 -13 Vt B6061BH TO-5 37.7 26 2.0 8.0 0.28 540 nm 330 - 720 580 1.0 x 10 -13 Vt B6060c ieH TO-5 37.7 2.0 8.0 460 - 675 555 1.0 x 10 -14 Vt B6061JH TO-5 with 3 pins 37.7 260 2.0 8.0 0.10 320 -1100 920 5.7 x 10 -14 Vt B6061UVH TO-5 37.7 260 2.0 8.0 0.04 220 nm 200 -1100 920 5.7 x 10 -14 Vt B6061UVJH TO-5 with 3 pins 37.7 260 8.0 0.04 220 nm 200 -1100 920 5.7 x 10 2.0 -14 Vt B8341H Ceramic 5.16 35 0.10 1.0 0.10 320 -1100 920 2.4 x 10 -14 Vt B8440H 8 mm ceramic 5.16 35 2.0 1.0 0.10 320 -1100 920 5.9 x 10 -13 1.1 x 10 Vt B8440BH 8 mm ceramic 5.16 4 2.0 1.0 0.28 540 nm 330 - 720 580 -14 Vt B8441H 8 mm ceramic 5.16 35 0.10 1.0 0.10 320 -1100 920 1.3 x 10 -14 Vt B8441BH 8 mm ceramic 5.16 4 0.10 1.0 0.28 540 nm 330 - 720 580 2.4 x 10 -14 Vt B9412H 6 mm ceramic 1.6 8 0.10 0.31 0.09 320 -1100 920 3.0 x 10 -14 Vt B9412BH 6 mm ceramic 1.6 0.8 0.10 0.31 0.28 540 nm 330 - 720 580 5.3 x 10 -15 Vt B9413H 6 mm ceramic 1.6 8 0.02 0.31 0.09 320 -1100 920 5.9 x 10 -14 Vt B9413BH 6 mm ceramic 1.6 0.8 0.02 0.31 0.28 540 nm 330 - 720 580 1.1 x 10 Figure 1 Package Drawing Vt B Series Flat Sidelooker Package www.excelitas.com 31 Silicon Photodiodes VTB Series Ultra High Dark Resistance ID

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:

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