Product Information

M13S2561616A-5TG2S

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Datasheet
SDRAM TOSP-66 RoHS
Manufacturer: ESMT



Price (Ex GST)

From 1.9939

0 - Global Stock
MOQ: 1 Multiples:1
Pack Size :   1
Availability Price Quantity
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Ships to you between
Mon. 30 May to Thu. 02 Jun

MOQ : 1
Multiples : 1
1 : $ 3.5319
10 : $ 2.9098
30 : $ 2.4615
100 : $ 2.0867
500 : $ 2.025
1000 : $ 1.9939

     
Manufacturer
ESMT
Product Category
SRAM
Category
Sram
Rohs
Y
Package
TOSP - 66
Brand Category
Esmt
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ESMT M13S2561616A (2S) DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition Four bank operation CAS Latency : 2.5, 3, 4 Burst Type : Sequential and Interleave Burst Length : 2, 4, 8 All inputs except data & DM are sampled at the rising edge of the system clock (CLK) Data I/O transitions on both edges of data strobe (DQS) DQS is edge-aligned with data for READs center-aligned with data for WRITEs Data mask (DM) for write masking only V = 2.5V 0.2V, V = 2.5V 0.2V DD DDQ 7.8us refresh interval Auto & Self refresh 2.5V I/O (SSTL 2 compatible) Ordering Information Product ID Max Freq. V Package Comments DD M13S2561616A -5TG2S 200MHz (DDR400) 66 pin TSOPII M13S2561616A -6TG2S 166MHz (DDR333) 2.5V Pb-free M13S2561616A -5BG2S 200MHz (DDR400) 60 Ball BGA M13S2561616A -6BG2S 166MHz (DDR333) Elite Semiconductor Memory Technology Inc. Publication Date : Apr. 2014 Revision : 1.0 1/49 ESMT M13S2561616A (2S) Functional Block Diagram CLK Clock Bank D CLK Generator Bank C CKE Bank B Address, BA Row Address Buffer Mode Register & Bank A & Extended Mode Register Refresh Counter DM DQS Sense Amplifier Column CS Column Decoder Address Buffer RAS & Refresh CAS Counter Data Control Circuit DQ WE DLL CLK, CLK Elite Semiconductor Memory Technology Inc. Publication Date : Apr. 2014 Revision : 1.0 2/49 Command Decoder Control Logic Row Decoder Latch Circuit Input & Output Buffer

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
ESMT
ESMT(Elite Semicon Memory Tech)