W E E E S H BC846A ... BC850C BC846A ... BC850C I = 100 mA V = 30...65 V C CEO h = 180/290/520 P = 250 mW FE tot SMD General Purpose NPN Transistors Tjmax = 150C SMD Universal-NPN-Transistoren Version 2017-07-25 Typical Applications Typische Anwendungen SOT-23 Signal processing, Signalverarbeitung, (TO-236) Switching, Amplification Schalten, Verstrken 1 1 Commercial grade ) Standardausfhrung ) +0.1 0.1 -0.2 1.1 2.9 Features Besonderheiten +0.1 0.4 -0.05 General Purpose Universell anwendbar 3 Three current gain groups Drei Stromverstrkungsklassen Compliant to RoHS, REACH, Konform zu RoHS, REACH, Type 1 1 Pb Conflict Minerals ) Konfliktmineralien ) Code 1 1 Mechanical Data ) Mechanische Daten ) 1 2 0.1 Taped and reeled 3000 / 7 Gegurtet auf Rolle 1.9 Weight approx. 0.01 g Gewicht ca. 1 = B 2 = E 3 = C Case material UL 94V-0 Gehusematerial Solder & assembly conditions 260C/10s Lt- und Einbaubedingungen Dimensions - Mae mm MSL = 1 Type Recommended complementary PNP transistors Code Empfohlene komplementre PNP-Transistoren BC846A = 1A BC847A = 1E BC848A = 1E BC846B = 1B BC847B = 1F BC848B = 1F BC846C = 1C BC847C = 1G BC848C = 1G BC856 ... BC860 BC850A = 1E BC849A = 1E BC850B = 1F BC849B = 1F BC850C = 1G BC849C = 1G 2 2 Maximum ratings ) Grenzwerte ) BC848 BC846 BC847 BC850 BC849 Collector-Emitter-voltage Kollektor-Emitter-Spannung B open V 65 V 45 V 45 V 30 V CEO Collector-Base-voltage Kollektor-Basis-Spannung E open V 80 V 50 V 50 V 30 V CBO Emitter-Base-voltage Emitter-Basis-Spannung C open V 6 V 5 V EBO 3 Power dissipation Verlustleistung P 250 mW ) tot Collector current Kollektorstrom DC IC 100 mA Peak Collector current Kollektor-Spitzenstrom I 200 mA CM Junction temperature Sperrschichttemperatur T -55...+150C j Storage temperature Lagerungstemperatur T -55+150C S 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 TA = 25C, unless otherwise specified TA = 25C, wenn nicht anders angegeben 2 3 Mounted on P.C. board with 3 mm copper pad at each terminal 2 Montage auf Leiterplatte mit 3 mm Kupferbelag (Ltpad) an jedem Anschluss Diotec Semiconductor AG BC846A ... BC850C Characteristics Kennwerte T = 25C Min. Typ. Max. j DC current gain Kollektor-Basis-Stromverhltnis Group A 90 V = 5 V, I = 10 A Group B h 150 CE C FE Group C 270 Group A 110 180 220 V = 5 V, I = 2 mA Group B h 200 290 450 CE C FE Group C 420 520 800 1 Collector-Emitter saturation voltage Kollektor-Sttigungsspannung ) I = 10 mA, I = 0.5 mA 90 mV 250 mV C B V CEsat I = 100 mA, I = 5 mA 200 mV 600 mV C B 2 Base-Emitter saturation voltage Basis-Sttigungsspannung ) I = 10 mA, I = 0.5 mA 700 mV C B V BEsat I = 100 mA, I = 5 mA 900 mV C B 2 Base-Emitter-voltage Basis-Emitter-Spannung ) V = 5 V, I = 2 mA 580 mV 660 mV 700 mV CE C V BE VCE = 5 V, IC = 10 mA 720 mV Collector-Base cutoff current Kollektor-Basis-Reststrom V = 30 V, (E open) 15 nA CB I CBO VCE = 30 V, Tj = 125C, (E open) 5 A Emitter-Base cutoff current VEB = 5 V, (C open) IEBO 100 nA Gain-Bandwidth Product Transitfrequenz V = 5 V, I = 10 mA, f = 100 MHz f 300 MHz CE C T Collector-Base Capacitance Kollektor-Basis-Kapazitt V = 10 V, I =i = 0, f = 1 MHz C 3.5 pF 6 pF CB E e CBO Emitter-Base Capacitance Emitter-Basis-Kapazitt V = 0.5 V, I = i = 0, f = 1 MHz C 9 pF EB C c EBO Thermal resistance junction to ambient 2 R < 420 K/W ) thA Wrmewiderstand Sperrschicht Umgebung Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 Tested with pulses t = 300 s, duty cycle 2% p Gemessen mit Impulsen tp = 300 s, Schaltverhltnis 2% 2 2 Mounted on P.C. board with 3 mm copper pad at each terminal 2 Montage auf Leiterplatte mit 3 mm Kupferbelag (Ltpad) an jedem Anschluss 2