BC817-16/-25/-40 Taiwan Semiconductor Small Signal Product 300mW, NPN Small Signal Transistor FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS complian - Green compound (Halogen free) with suffix on packing code and prefix on date code MECHANICAL DATA - Case: SOT- 23 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260C/10s SOT-23 - Weight: 0.008gram (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT P Power dissipation 300 mW D Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 45 V CEO V Emitter-Base Voltage 5 V EBO Collector Current I 500 mA C Thermal Resistance (Junction to Ambient) R 417 C JA Junction Temperature T 150 C J Storage Temperature Range T -55 to + 150 C STG Notes: 1. Valid provided that electrodes are kept at ambient temperature PARAMETER BC817-16 BC817-25 BC817-40 SYMBOL UNIT Collector-Base Breakdown Voltage I = 10A I = 0 V 50 V C E (BR)CBO I = 10mA I = 0 V Collector-Emitter Breakdown Voltage 45 V C B (BR)CEO Emitter-Base Breakdown Voltage I = 1A I = 0 V 5 V E C (BR)EBO Collector Cut-off Current V = 45V I = 0 I 0.1 A CB E CBO Emitter Cut-off Current V = 4V I = 0 I 0.1 A EB C EBO Collector-Emitter Saturation Voltage I = 500mA I = 50 mA V 0.7 V C B CE(sat) I = 500mA I = 50 mA V Base-Emitter Saturation Voltage 1.2 V C B BE(sat) V = 5V I = 10mA f 100 Transition Frequency f= 100MHz MHz CE C T Junction Capacitance V =10V f= 1.0MHz C 10 pF CB CBO V = 1V I = 100mA 100 400 600 CE C DC Current Gain h FE V = 1V I = 100mA >40 160 250 CE C h DC Current Gain 100-250 160-400 250-600 FE Vce=1V Ic=500mA h 40 Min. DC Current Gain FE Version: G14 Document Number: DS S1404005BC817-16/-25/-40 Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) Fig. 2 Collector-Emitter Saturation Voltage VS. Fig.1 Typical Pulsed Current Gain VS. Collector Current 10 10.00 o 25 C 1 1.00 0.1 0.10 0.01 V = 5 V CE 0.001 0.01 0 100 200 300 400 500 0.0 0.1 0.2 0.3 0.4 0.5 0.6 h FE V Collector Emitter Voltage (V) CE(sat) , Fig. 3 Base-Emitter Saturation Voltage Fig. 3 Fig. 4 Base-Emitter On Voltage VS. Collector Current VS. Collector Current 1000 1.000 100 0.100 o 25 C o 25 C 10 0.010 0.001 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V , Base-Emitter on Voltage (V) BE(sat) V , Base-Emitter Voltage (V) BE Fig. 5 Collector-Base Capacitance VS. Fig. 5 Collector-Base Voltage 40 30 20 10 0 0 4 8 12 16 20 24 28 V , Collector-Base Voltage (V) CB Version: G14 Document Number: DS S1404005 I , Collector Current (mA) C I , Collector Current (A) Collector-Base Capacitance (pF) C I Collector Current (mA) C , I , Collector Current (A) C