Product Information

1N4007

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Datasheet
Diodes - General Purpose 1kV 1A 1.1V @ 1A DO-41 RoHS
Manufacturer: DIOFIT



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From 0.0209

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MOQ: 50 Multiples:50
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MOQ : 50
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1N4007
DIOFIT

50 : $ 0.0343
500 : $ 0.0258
1500 : $ 0.0243
5000 : $ 0.0228
25000 : $ 0.022
50000 : $ 0.0217
250000 : $ 0.0209

     
Manufacturer
DIOFIT
Product Category
Diodes - General Purpose, Power, Switching
Packaging
Tape And Reel
Category
Diodes-General Purpose, Power, Switching
Brand
DIOFIT
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1.0Amp General Purpose Rectifiers 1N4001~1N4007 Features DO-41 The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage 1.0 (25.4) MIN. High forward surge current capability 0.107 (2.7) High temperature soldering guaranteed: 0.080 (2.0) DIA. 250C/10 seconds,0.375 (9.5mm) lead length, 5 lbs. (2.3kg) tension 0.205 (5.2) 0.160(4.1) Mechanical Data 1.0 (25.4) MIN. Case: JEDEC DO-41 molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 0.030(0.75) 0.020(0.50) DIA. Polarity: Color band denotes cathode end Mounting Position: Any Dimensions in inches and (millimeters) Weight :0.012 ounce, 0.33 grams Maximum Ratings And Electrical Characteristics Single phase half-wave 60Hz,resistive or inductive load, Ratings at 25 C ambient temperature unless otherwise specified. for capacitive load current derate by 20%. 1N 1N 1N 1N 1N 1N 1N SYMBOLS UNITS 4006 4007 4001 4002 4003 4004 4005 Maximum repetitive peak reverse voltage 50 100 200 400 600 800 1000 VOLTS VRRM Maximum RMS voltage 35 70 140 280 420 560 700 VOLTS VRMS VOLTS Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 Maximum average forward rectified current I(AV) 1.0 Amp 0.375(9.5mm) lead length at TA=75 C Peak forward surge current IFSM 30.0 8.3ms single half sine-wave superimposed on Amps rated load (JEDEC Method) VF Maximum instantaneous forward voltage at 1.0A 1.1 Volts Maximum DC reverse current TA=25 C 5.0 A IR 50.0 at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) CJ pF 15.0 RJA C/W Typical thermal resistance (NOTE 2) 50.0 Operating junction and storage temperature range TJ,TSTG C -65 to +175 Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.Thermal resistance from junction to ambient at 0.375 (9.5mm)lead length,P.C.B. mounted Rev.2013A Page 1 Ratings And Characteristic Curves 1N4001 THRU 1N4007 FIG. 1- FORWARD CURRENT DERATING CURVE FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 1.0 30 0.8 25 0.6 20 Single Phase 0.4 Half Wave 60Hz 15 Resistive or inductive Load 0.2 10 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 0 0 25 50 75 100 125 150 175 5.0 1 10 100 AMBIENT TEMPERATURE, C NUMBER OF CYCLES AT 60 Hz FIG. 3-TYPICAL INSTANTANEOUS FORWARD FIG. 4-TYPICAL REVERSE CHARACTERISTICS CHARACTERISTICS 20 1,000 10 100 1 TJ=100 C 10 TJ=25 C PULSE WIDTH=300 s 0.1 1%DUTY CYCLE 1 TJ=25 C 0.1 0.01 0.6 0.8 1.0 1.2 1.4 1.5 0.01 0 30 60 90 120 150 INSTANTANEOUS FORWARD VOLTAGE, PERCENT OF PEAK REVERSE VOLTAGE,% VOLTS FIG. 5-TYPICAL JUNCTION CAPACITANCE FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 200 100 TJ=25 C 100 10 10 1 0.1 0.01 0.1 1 10 100 1 0.1 1.0 10 100 REVERSE VOLTAGE,VOLTS t,PULSE DURATION,sec. Rev.2013A Page 2 AVERAGE FORWARD RECTIFIED CURRENT, JUNCTION CAPACITANCE, pF INSTANTANEOUS FORWARD AMPERES CURRENT,AMPERES TRANSIENT THERMAL IMPEDANCE, INSTANTANEOUS REVERSE CURRENT, PEAK FORWARD SURGE CURRENT, C/W MICROAMPERES AMPERES

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free